Invention Grant
- Patent Title: Semiconductor process for forming plug
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Application No.: US15586240Application Date: 2017-05-03
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Publication No.: US10068797B2Publication Date: 2018-09-04
- Inventor: Pin-Hong Chen , Kuo-Chih Lai , Chia Chang Hsu , Chun-Chieh Chiu , Li-Han Chen , Shu Min Huang , Min-Chuan Tsai , Hsin-Fu Huang , Chi-Mao Hsu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/768 ; H01L21/285 ; H01L23/532
Abstract:
A semiconductor process for forming a plug includes the following steps. A dielectric layer having a recess is formed on a substrate. A titanium layer is formed to conformally cover the recess. A first titanium nitride layer is formed to conformally cover the titanium layer, thereby the first titanium nitride layer having first sidewall parts. The first sidewall parts of the first titanium nitride layer are pulled back, thereby second sidewall parts being formed. A second titanium nitride layer is formed to cover the recess. Moreover, a semiconductor structure formed by said semiconductor process is also provided.
Public/Granted literature
- US20170236747A1 SEMICONDUCTOR PROCESS FOR FORMING PLUG Public/Granted day:2017-08-17
Information query
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