Invention Grant
- Patent Title: Method and processing apparatus for performing pre-treatment to form copper wiring in recess formed in substrate
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Application No.: US15627478Application Date: 2017-06-20
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Publication No.: US10068798B2Publication Date: 2018-09-04
- Inventor: Hiroyuki Toshima , Tatsuo Hatano , Shinji Furukawa , Naoki Watanabe , Naoyuki Suzuki
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2016-126715 20160627
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L21/768 ; H01L21/687 ; H01J37/32 ; H01J37/34

Abstract:
There is provided a method for performing a pre-treatment to form a copper wiring in a recess formed in a substrate, which includes forming a barrier layer on a surface of the substrate that defines the recess, and forming a seed layer on the barrier layer. The method further includes at least one of etching the barrier layer and etching the seed layer. In the at least one of etching the barrier layer and etching the seed layer, the substrate is inclined with respect to an irradiation direction of ions while rotating the substrate.
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Information query
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