Invention Grant
- Patent Title: Method for forming recess within epitaxial layer
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Application No.: US15861700Application Date: 2018-01-04
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Publication No.: US10069009B2Publication Date: 2018-09-04
- Inventor: An-Chi Liu , Chun-Hsien Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW105141215A 20161213
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/78 ; H01L23/532 ; H01L23/535 ; H01L29/267 ; H01L29/24 ; H01L29/16 ; H01L29/161 ; H01L29/08 ; H01L21/768 ; H01L21/283 ; H01L29/417 ; H01L29/165 ; H01L29/66

Abstract:
A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first recess adjacent to two sides of the gate structure; forming an epitaxial layer in the first recess; removing part of the epitaxial layer to forma second recess; and forming an interlayer dielectric (ILD) layer on the gate structure and into the second recess.
Public/Granted literature
- US20180166571A1 METHOD FOR FORMING RECESS WITHIN EPITAXIAL LAYER Public/Granted day:2018-06-14
Information query
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