Invention Grant
- Patent Title: Adaptive bias circuit for a radio frequency (RF) amplifier
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Application No.: US15271518Application Date: 2016-09-21
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Publication No.: US10069469B2Publication Date: 2018-09-04
- Inventor: Woonyun Kim , Chang-Ho Lee , Minsik Ahn , Jeongwon Cha
- Applicant: QUALCOMM INCORPORATED
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Smith Tempel Blaha LLC/Qualcomm
- Main IPC: H03F3/04
- IPC: H03F3/04 ; H03F3/45 ; H03F3/193 ; H03F1/02 ; H03F3/24
Abstract:
A circuit includes a first transistor comprising a gate, a source, and a drain, and an inductor coupled between the gate and the source of the first transistor, wherein the source is further coupled to a current source and the gate is further coupled to an amplifier.
Public/Granted literature
- US20170222608A1 Adaptive Bias Circuit For A Radio Frequency (RF) Amplifier Public/Granted day:2017-08-03
Information query
