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公开(公告)号：US09160377B2
公开(公告)日：2015-10-13
申请号：US13720851
申请日：2012-12-19
Applicant: QUALCOMM Incorporated
Inventor： Chang-Ho Lee , Woonyun Kim , Minsik Ahn , Jeongwon Cha , Yunseo Park , Aristotele Hadjichristos
CPC classification number: H04B1/0458 , H03F1/0277 , H03F3/72 , H03F2203/7239 , H03H7/38 , H04B1/0483
Abstract: Exemplary embodiments are directed to an amplifier module which may comprise a transmit path including a first amplifier and a second amplifier. The exemplary amplifier module may further include a transformer coupled between the first amplifier and the second amplifier and switchably configured for coupling the first amplifier in series with the second amplifier in a first mode and coupling the first amplifier to bypass the second amplifier in a second mode.
Abstract translation: 示例性实施例涉及放大器模块，其可以包括包括第一放大器和第二放大器的发射路径。 示例性放大器模块还可以包括耦合在第一放大器和第二放大器之间的变压器，并且可切换地配置用于以第一模式将第一放大器与第二放大器串联耦合，并且以第二模式耦合第一放大器旁路第二放大器 。
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Patent Agency Ranking
公开(公告)号：US20150050901A1
公开(公告)日：2015-02-19
申请号：US13720851
申请日：2012-12-19
Applicant: QUALCOMM INCORPORATED
Inventor： Chang-Ho Lee , Woonyun Kim , Minsik Ahn , Jeongwon Cha , Yunseo Park , Aristotele Hadjichristos
IPC: H04B1/04
CPC classification number: H04B1/0458 , H03F1/0277 , H03F3/72 , H03F2203/7239 , H03H7/38 , H04B1/0483
Abstract: Exemplary embodiments are directed to an amplifier module which may comprise a transmit path including a first amplifier and a second amplifier. The exemplary amplifier module may further include a transformer coupled between the first amplifier and the second amplifier and switchably configured for coupling the first amplifier in series with the second amplifier in a first mode and coupling the first amplifier to bypass the second amplifier in a second mode.
Abstract translation: 示例性实施例涉及放大器模块，其可以包括包括第一放大器和第二放大器的发射路径。 示例性放大器模块还可以包括耦合在第一放大器和第二放大器之间的变压器，并且可切换地配置用于以第一模式将第一放大器与第二放大器串联耦合，并且以第二模式耦合第一放大器旁路第二放大器 。
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公开(公告)号：US10158327B2
公开(公告)日：2018-12-18
申请号：US15473516
申请日：2017-03-29
Applicant: QUALCOMM Incorporated
Inventor： Woonyun Kim
Abstract: An adaptive bias circuit for a power amplifier may include a terminal node coupled to the power amplifier. The adaptive bias circuit may also include a low impedance bias circuit coupled to the terminal node. The adaptive bias circuit may further include a high drive bias circuit coupled to the low impedance bias circuit through the terminal node. A separation device may be arranged between the low impedance bias circuit and the high drive bias circuit.
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公开(公告)号：US10069469B2
公开(公告)日：2018-09-04
申请号：US15271518
申请日：2016-09-21
Applicant: QUALCOMM INCORPORATED
Inventor： Woonyun Kim , Chang-Ho Lee , Minsik Ahn , Jeongwon Cha
Abstract: A circuit includes a first transistor comprising a gate, a source, and a drain, and an inductor coupled between the gate and the source of the first transistor, wherein the source is further coupled to a current source and the gate is further coupled to an amplifier.
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公开(公告)号：US20170222608A1
公开(公告)日：2017-08-03
申请号：US15271518
申请日：2016-09-21
Applicant: QUALCOMM INCORPORATED
Inventor： Woonyun Kim , Chang-Ho Lee , Minsik Ahn , Jeongwon Cha
CPC classification number: H03F3/45179 , H03F1/0266 , H03F3/193 , H03F3/245 , H03F3/45188 , H03F2200/165 , H03F2200/168 , H03F2200/18 , H03F2200/294 , H03F2200/336 , H03F2200/451 , H03F2203/45244
Abstract: A circuit includes a first transistor comprising a gate, a source, and a drain, and an inductor coupled between the gate and the source of the first transistor, wherein the source is further coupled to a current source and the gate is further coupled to an amplifier.
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公开(公告)号：US20140266448A1
公开(公告)日：2014-09-18
申请号：US13828646
申请日：2013-03-14
Applicant: QUALCOMM INCORPORATED
Inventor： Jeongwon Cha , Chang-Ho Lee , Woonyun Kim , Aristotele Hadjichristos , Yu Zhao
CPC classification number: H03F3/193 , H03F1/0211 , H03F1/0261 , H03F1/22 , H03F1/223 , H03F1/3205 , H03F3/21 , H03F3/2171 , H03F3/245 , H03F2200/18 , H03F2200/61
Abstract: Exemplary embodiments are related to an envelope-tracking power amplifier. A device may include a first transistor of a plurality of transistors in a stacked configuration configured to receive a supply voltage varying with an envelope of a radio-frequency (RF) input signal. The device may further include a second transistor of the plurality in the stacked configuration coupled to a reference voltage and configured to receive a dynamic bias voltage varying inversely proportional to the supply voltage.
Abstract translation: 示例性实施例涉及包络跟踪功率放大器。 器件可以包括堆叠配置中的多个晶体管的第一晶体管，其被配置为接收随着射频（RF）输入信号的包络而变化的电源电压。 器件还可包括多个堆叠配置中的第二晶体管，其耦合到参考电压并被配置为接收与电源电压成反比变化的动态偏置电压。
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