Invention Grant
- Patent Title: Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory
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Application No.: US15679016Application Date: 2017-08-16
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Publication No.: US10074414B2Publication Date: 2018-09-11
- Inventor: Scott J. Derner , Christopher J. Kawamura
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G11C11/22
- IPC: G11C11/22 ; H01L27/11514 ; H01L27/11509

Abstract:
Apparatuses and methods are disclosed that in ferroelectric memory and for operating ferroelectric memory. An example apparatus includes a capacitor having a first plate, a second plate, and a ferroelectric dielectric material. The apparatus further includes a first digit line and a first selection component configured to couple the first plate to the first digit line, and also includes a second digit line and a second selection component configured to couple the second plate to the second digit line.
Public/Granted literature
- US20180061469A1 APPARATUSES AND METHODS INCLUDING FERROELECTRIC MEMORY AND FOR OPERATING FERROELECTRIC MEMORY Public/Granted day:2018-03-01
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