- 专利标题： Saucer-shaped isolation structures for semiconductor devices
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申请号： US14875176申请日： 2015-10-05
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公开(公告)号： US10074716B2公开(公告)日： 2018-09-11
- 发明人: Wai Tien Chan , Donald Ray Disney , Richard K. Williams
- 申请人： SKYWORKS SOLUTIONS (HONG KONG) LIMITED , ADVANCED ANALOGIC TECHNOLOGIES INCORPORATED
- 申请人地址： CN Hong Kong US CA San Jose
- 专利权人： SKYWORKS SOLUTIONS (HONG KONG) LIMITED,ADVANCED ANALOGIC TECHNOLOGIES INCORPORATED
- 当前专利权人： SKYWORKS SOLUTIONS (HONG KONG) LIMITED,ADVANCED ANALOGIC TECHNOLOGIES INCORPORATED
- 当前专利权人地址： CN Hong Kong US CA San Jose
- 代理机构： Lando & Anastasi, LLP
- 主分类号： H01L21/70
- IPC分类号： H01L21/70 ; H01L29/06 ; H01L21/265 ; H01L21/761 ; H01L21/762 ; H01L21/763 ; H01L21/8234 ; H01L21/8238
摘要：
An isolation structure formed in a semiconductor substrate of a first conductivity type includes a region of a second conductivity type opposite to the first conductivity type. The region of the second conductivity type is saucer-shaped and has a floor portion substantially parallel to the top surface of the substrate and a sloped sidewall portion. The sloped sidewall portion extends downward from the top surface of the substrate at an oblique angle and merges with the floor portion. The floor portion and the sloped sidewall portion together form an isolated pocket of the substrate.
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