Invention Grant
- Patent Title: Method of controlling storage device and random access memory and method of controlling nonvolatile memory device and buffer memory
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Application No.: US15499243Application Date: 2017-04-27
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Publication No.: US10083116B2Publication Date: 2018-09-25
- Inventor: Myung-June Jung
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2016-0064247 20160525
- Main IPC: G06F12/08
- IPC: G06F12/08 ; G06F12/12 ; G06F12/0888
Abstract:
A method of controlling a storage device and a random access memory includes, when a size of write-requested data is greater than a threshold, writing the write-requested data in the storage device and writing an address of the storage device in which the write-requested data is written in the random access memory. When the size of the write-requested data is smaller than or equal to the threshold, the write-requested data is written in the random access memory. The threshold is correlated to a size greater than a size of an area allocated to store the address in the random access memory.
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