Invention Grant
- Patent Title: Thin-film capacitor and electronic component embedded substrate
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Application No.: US15804324Application Date: 2017-11-06
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Publication No.: US10085343B2Publication Date: 2018-09-25
- Inventor: Hitoshi Saita , Yoshihiko Yano
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLLC
- Priority: JP2016-216476 20161104
- Main IPC: H05K1/16
- IPC: H05K1/16 ; H05K1/18 ; H01L23/498 ; H01L23/64 ; H01L23/00 ; H01L21/48 ; H01G4/30 ; H01G4/008 ; H05K1/11

Abstract:
A thin-film capacitor includes a pair of electrode layers composed of a first electrode layer configured to store positive charges and a second electrode layer configured to store negative charges; and a dielectric layer sandwiched between the pair of electrode layers along a lamination direction. The first electrode layer includes a first main electrode layer in contact with the dielectric layer. The second electrode layer includes a second main electrode layer and a second sub-electrode layer, both of which are formed of different metallic materials. The second sub-electrode layer is sandwiched between the dielectric layer and the second main electrode layer along the lamination direction. The second main electrode layer is formed of a material having a melting point lower than both a melting point of a material of the first electrode layer, or the first main electrode layer, and that of a material of the second sub-electrode layer.
Public/Granted literature
- US20180132355A1 THIN-FILM CAPACITOR AND ELECTRONIC COMPONENT EMBEDDED SUBSTRATE Public/Granted day:2018-05-10
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