公开(公告)号：US11967468B2

公开(公告)日：2024-04-23

申请号：US17559189

申请日：2021-12-22

Applicant: TDK CORPORATION

Inventor： Masahiro Hiraoka ,  Hitoshi Saita

IPC: H01G4/33 ,  H01G4/008 ,  H01G4/012 ,  H01G4/10

CPC classification number: H01G4/33 ,  H01G4/008 ,  H01G4/012 ,  H01G4/10

Abstract: Disclosed herein is a thin film capacitor that includes a capacitive insulating film having first and second surfaces opposite to each other, a first capacitive electrode covering the first surface of the capacitive insulating film, and a second capacitive electrode covering the second surface of the capacitive insulating film. The first capacitive electrode is made of less noble metal having a lower spontaneous potential than a metal constituting the second capacitive electrode. A minute defective portion existing in the capacitive insulating film is closed by an insulator derived from a metal constituting the first capacitive electrode.

公开(公告)号：US11011315B2

公开(公告)日：2021-05-18

申请号：US16436559

申请日：2019-06-10

Applicant: TDK CORPORATION

Inventor： Michihiro Kumagae ,  Kazuhiro Yoshikawa ,  Shigeaki Tanaka ,  Hitoshi Saita

IPC: H01G4/33 ,  H01L23/498 ,  H01L49/02 ,  H05K1/11 ,  H05K1/16 ,  H05K3/46 ,  H05K1/09

Abstract: Disclosed herein is a thin film capacitor that includes a capacitive insulating film having first and second through holes, a first metal film provided on one surface of the capacitive insulating film, and a second metal film provided on the other surface of the capacitive insulating film. The first and second metal films are made of different metal materials from each other. The first metal film is divided into a first area positioned outside the first space and a second area positioned inside the first space. The second metal film is divided into a third area positioned outside the second space and a fourth area positioned inside the second space. The third area is connected to the second area through the first through hole. The fourth area is connected to the first area through the second through hole.

公开(公告)号：US11651895B2

公开(公告)日：2023-05-16

申请号：US17536319

申请日：2021-11-29

Applicant: TDK Corporation

Inventor： Suguru Andoh ,  Hiroshi Takasaki ,  Hitoshi Saita

IPC: H01G4/015 ,  H01G4/33

CPC classification number: H01G4/015 ,  H01G4/33

Abstract: Disclosed herein is a thin film capacitor that includes a capacitive insulating film having first and second surfaces opposite to each other, a first capacitive electrode covering the first surface of the capacitive insulating film, and a second capacitive electrode covering the second surface of the capacitive insulating film and including a plurality of capacitor areas divided by a slit and a plurality of fuse areas connecting two of adjacent capacitor areas. The second capacitive electrode has a structure in which a plurality of conductor films including a first conductor film and a second conductor film lower in electrical resistivity than the first conductor film are laminated.

公开(公告)号：US11443900B2

公开(公告)日：2022-09-13

申请号：US17166528

申请日：2021-02-03

Applicant: TDK Corporation

Inventor： Masahiro Hiraoka ,  Hiroshi Takasaki ,  Hitoshi Saita

IPC: H01G4/33 ,  C23C14/34 ,  H01G4/008 ,  H01G4/12

Abstract: A thin film capacitor comprises a first electrode, a second electrode, and a dielectric substance disposed between the first electrode 10 and the second electrode. The second electrode has a first metallic layer, an intermediate layer, and a second metallic layer in sequence in this order from the side of the dielectric substance. The first metallic layer contains a metal element M1 as a main component, and the second metallic layer contains a metal element M2 different from the metal element M1 as a main component. The intermediate layer has one or more laminate structures each having a second metal sublayer containing the metal element M2 as a main component and a first metal sublayer containing the metal element M1 as a main component in sequence from the side of the first metallic layer toward the side of the second metallic layer.

公开(公告)号：US11062851B2

公开(公告)日：2021-07-13

申请号：US16790347

申请日：2020-02-13

Applicant: TDK Corporation

Inventor： Toshio Asahi ,  Hitoshi Saita

IPC: H01G2/06 ,  H01G4/008 ,  H01G4/33 ,  H01L23/12 ,  H01G4/30 ,  H05K1/16 ,  H05K3/46

Abstract: Disclosed herein is a thin film capacitor embedded substrate that includes a substrate and a plurality of thin film capacitors including at least first and second thin film capacitors embedded in the substrate. The first and second thin film capacitors are connected in parallel and have mutually different self-resonant frequencies.

公开(公告)号：US10991510B2

公开(公告)日：2021-04-27

申请号：US16359824

申请日：2019-03-20

Applicant: TDK CORPORATION

Inventor： Saori Takahashi ,  Masahito Furukawa ,  Masamitsu Haemori ,  Hiroki Uchiyama ,  Wakiko Sato ,  Hitoshi Saita

IPC: H01G4/33 ,  H01G4/12

Abstract: A dielectric membrane may be exposed to an acid solution such as hydrochloric acid, nitric acid, or sulfuric acid during a wet process after membrane formation. The inventors have newly found that when a dielectric membrane includes Ca having a lower ionization tendency than Ba and Zr having a lower ionization tendency than Ti in a main component of a metal oxide expressed by a general formula (Ba, Ca)(Ti, Zr)O3 and satisfies at least one of degree of orientation of (100) plane>degree of orientation of (110) plane and degree of orientation of (111) plane>degree of orientation of (110) plane in a membrane thickness direction, the dielectric membrane is less likely to be damaged during a wet process, and the resistance to a wet process is improved.

公开(公告)号：US09111681B2

公开(公告)日：2015-08-18

申请号：US13923585

申请日：2013-06-21

Applicant: TDK Corporation

Inventor： Hitoshi Saita ,  Yoshihiko Yano ,  Yasunobu Oikawa

IPC: H01G4/008 ,  H01G4/01 ,  H01G4/33 ,  H01L49/02

CPC classification number: H01G4/008 ,  H01G4/01 ,  H01G4/33 ,  H01L28/60

Abstract: A thin film capacitor includes a lower electrode layer, a dielectric layer that is provided on said lower electrode layer, and an upper electrode layer that is formed on the dielectric layer. Wherein, the lower electrode layer contains at least a Ni electrode layer, the upper electrode layer configured with at least two layers of a Ni electrode layer and a Cu electrode layer, and the dielectric layer is in contact with both the Ni electrode layer of the lower electrode layer and the Ni electrode layer of the upper electrode layer.

Abstract translation: 薄膜电容器包括下电极层，设置在所述下电极层上的电介质层和形成在电介质层上的上电极层。 其中，下电极层至少含有Ni电极层，上电极层配置有Ni电极层和Cu电极层的至少两层，电介质层与Ni电极层的Ni电极层 下电极层和上电极层的Ni电极层。

公开(公告)号：US11581148B2

公开(公告)日：2023-02-14

申请号：US17165498

申请日：2021-02-02

Applicant: TDK CORPORATION

Inventor： Masahiro Hiraoka ,  Mitsuhiro Tomikawa ,  Hitoshi Saita

IPC: H01G4/33 ,  H01G4/008 ,  H01G4/08 ,  H05K3/38 ,  H05K1/03 ,  H01G4/30

Abstract: Disclosed herein a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer disposed between the lower electrode layer and the upper electrode layer. The lower electrode layer includes a first metal layer positioned on a side facing the dielectric layer and a second metal layer positioned on a side facing away from the dielectric layer. The first metal layer has a first surface positioned on a side facing the second metal layer and a second surface positioned on a side facing the dielectric layer. The first surface has a surface roughness higher than that of the second surface. The second metal layer reflects a surface property of the first surface.

公开(公告)号：US11453615B2

公开(公告)日：2022-09-27

申请号：US17189859

申请日：2021-03-02

Applicant: TDK CORPORATION

Inventor： Toshio Asahi ,  Masamitsu Haemori ,  Hitoshi Saita ,  Masahito Furukawa

IPC: C04B35/58 ,  H01G4/12 ,  H01G4/008

Abstract: A dielectric thin film contains Ca, Sr, Ti, Hf, O and N, wherein among crystal grains existing in a plane field of view of 1 μm square perpendicular to a film thickness direction of the dielectric thin film, a number ratio of crystal grains having a grain size of 19 nm or more and less than 140 nm is 95% or more, among the crystal grains existing in the plane field of view, a number ratio of first crystal grains having a grain size of 65 nm or more and less than 77 nm is 20% or more, and among the crystal grains existing in the plane field of view, a number ratio of second crystal grains having a grain size of 19 nm or more and less than 54 nm is 40% or less.

公开(公告)号：US11240908B2

公开(公告)日：2022-02-01

申请号：US16665503

申请日：2019-10-28

Applicant: TDK Corporation

Inventor： Kazuhiro Yoshikawa ,  Yuuki Aburakawa ,  Tatsuo Namikawa ,  Kenichi Yoshida ,  Hitoshi Saita

IPC: H05K1/00 ,  H05K1/02 ,  H05K1/11 ,  H05K1/16

Abstract: Disclosed herein is a thin film capacitor that includes a capacitive insulating film, a first metal film formed on one surface of the capacitive insulating film, and a second metal film formed on other surface of the capacitive insulating film and made of a metal material different from that of the first metal film. The thin film capacitor has an opening penetrating the capacitive insulating film, first metal film, and second metal film. The second metal film is thicker than the first metal film. A first size of a part of the opening that penetrates the first metal film is larger than a second size of a part of the opening that penetrates the second metal film.