THIN FILM CAPACITOR
    1.
    发明申请
    THIN FILM CAPACITOR 有权
    薄膜电容器

    公开(公告)号:US20130258544A1

    公开(公告)日:2013-10-03

    申请号:US13796822

    申请日:2013-03-12

    CPC classification number: H01G4/306 H01G4/228 H01G4/232 H01G4/33 H01G4/38

    Abstract: A thin film capacitor includes an under electrode, a plurality of dielectric body layers and a plurality of internal electrode layers that are alternately laminated on the under electrode, the internal electrode layers respectively including protrusion parts that each protrude from the dielectric body layers viewed in the lamination direction, and connection electrodes to which at least a portion of each of the protrusion parts contacts. Assuming that protrusion amounts of the protrusion parts of the internal electrode layers that are connected to the same connection electrode are regarded as L, a protrusion amount Ln of a protrusion part of nth (n≧2) internal electrode layer from the under electrode side is smaller than another protrusion amount Ln-1 of another protrusion part of (n-1)th internal electrode layer.

    Abstract translation: 薄膜电容器包括底电极,多个电介质体层和交替层叠在下电极上的多个内电极层,内电极层分别包括从电介质体层中观察到的每个突出部分的突出部分 层叠方向和每个突起部的至少一部分接触的连接电极。 假设连接到同一连接电极的内部电极层的突出部分的突出量被认为是L,则从下部电极侧的第n(n> = 2)个内部电极层的突出部分的突出量Ln 小于第(n-1)个内部电极层的另一突起部的另一突出量Ln-1。

    Thin film capacitor
    3.
    发明授权

    公开(公告)号:US09711283B2

    公开(公告)日:2017-07-18

    申请号:US14706486

    申请日:2015-05-07

    CPC classification number: H01G2/10 H01G2/103 H01G4/008 H01G4/10 H01G4/33

    Abstract: A thin film capacitor includes: a laminated body in which a dielectric layer and an upper electrode layer are successively laminated on a base electrode; a protective layer that covers a part of the base electrode, the dielectric layer and the upper electrode layer and includes a through-hole respectively on the base electrode and on the upper electrode layer; and terminal electrodes that are electrically connected with the base electrode and the upper electrode layer through the through-holes of the protective layer. A modulus of longitudinal elasticity (Young's modulus) of the protective layer is 0.1 GPa to 2.0 GPa.

    Thin film capacitor
    4.
    发明授权
    Thin film capacitor 有权
    薄膜电容器

    公开(公告)号:US09111681B2

    公开(公告)日:2015-08-18

    申请号:US13923585

    申请日:2013-06-21

    CPC classification number: H01G4/008 H01G4/01 H01G4/33 H01L28/60

    Abstract: A thin film capacitor includes a lower electrode layer, a dielectric layer that is provided on said lower electrode layer, and an upper electrode layer that is formed on the dielectric layer. Wherein, the lower electrode layer contains at least a Ni electrode layer, the upper electrode layer configured with at least two layers of a Ni electrode layer and a Cu electrode layer, and the dielectric layer is in contact with both the Ni electrode layer of the lower electrode layer and the Ni electrode layer of the upper electrode layer.

    Abstract translation: 薄膜电容器包括下电极层,设置在所述下电极层上的电介质层和形成在电介质层上的上电极层。 其中,下电极层至少含有Ni电极层,上电极层配置有Ni电极层和Cu电极层的至少两层,电介质层与Ni电极层的Ni电极层 下电极层和上电极层的Ni电极层。

    Thin film capacitor
    6.
    发明授权

    公开(公告)号:US09818548B2

    公开(公告)日:2017-11-14

    申请号:US15006366

    申请日:2016-01-26

    CPC classification number: H01G4/33 H01G4/1227 H01G4/1236

    Abstract: A thin film capacitor comprises a base material, a dielectric layer provided on the base material, and an upper electrode layer provided on the dielectric layer. The dielectric layer includes a plurality of columnar crystals that extend along a normal direction with respect to a surface of the upper electrode layer, the columnar crystal has a perovskite crystal structure represented by AyBO3, an element A is at least one of Ba, Ca, Sr, and Pb, an element B is at least one of Ti, Zr, Sn, and Hf, y≦0.995 is satisfied, and the dielectric layer contains 0.05 to 2.5 mol of Al per 100 mol of AyBO3.

    Thin film capacitor
    7.
    发明授权
    Thin film capacitor 有权
    薄膜电容器

    公开(公告)号:US09076600B2

    公开(公告)日:2015-07-07

    申请号:US13796986

    申请日:2013-03-12

    CPC classification number: H01G4/306 H01G4/232 H01G4/33 H01G4/38

    Abstract: A thin film capacitor includes two or more of dielectric body layers that are alternately laminated on an under-electrode, and internal electrode layers that are laminated between the dielectric body layers, and are exposed off the dielectric body layer, and a connection electrode that is electrically connected to the internal electrode layers via the exposed portion of the internal electrode layers, A relationship between an average grain size D of crystal grains in the internal electrode layers and an average grain size d of crystal grains in the connection electrode is D>d.

    Abstract translation: 薄膜电容器包括交替层压在底电极上的两个或更多个介电体层,以及叠层在电介质体层之间并从电介质体层露出的内部电极层,以及连接电极, 通过内部电极层的露出部与内部电极层电连接,内部电极层的晶粒的平均粒径D与连接电极的晶粒的平均粒径d之间的关系为D> d 。

Patent Agency Ranking