Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15429719Application Date: 2017-02-10
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Publication No.: US10090328B2Publication Date: 2018-10-02
- Inventor: Junggil Yang , Dong Il Bae , Geumjong Bae , Seungmin Song , Jongho Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2016-0070494 20160607
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L27/12 ; H01L27/02 ; H01L29/78
Abstract:
A semiconductor device includes an insulating layer on a substrate, a first channel pattern on the insulating layer and contacting the insulating layer, second channel patterns on the first channel pattern and being horizontally spaced apart from each other, a gate pattern on the insulating layer and surrounding the second channel patterns, and a source/drain pattern between the second channel patterns.
Public/Granted literature
- US20170352684A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-12-07
Information query
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