Invention Grant
- Patent Title: Methods of forming semiconductor device structures, and methods of forming capacitor structures
-
Application No.: US14065662Application Date: 2013-10-29
-
Publication No.: US10090376B2Publication Date: 2018-10-02
- Inventor: Dan B. Millward , J. Neil Greeley
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L21/02 ; H01L49/02 ; H01L21/311 ; H01L27/108
Abstract:
A method of forming a semiconductor device structure comprises forming a mold template comprising trenches within a mold material. Structures are formed within the trenches of the mold template. A wet removal process is performed to remove the mold template, a liquid material of the wet removal process remaining at least in spaces between adjacent pairs of the structures following the wet removal process. A polymer material is formed at least in the spaces between the adjacent pairs of the structures. At least one dry removal process is performed to remove the polymer material from at least the spaces between the adjacent pairs of the structures. Additional methods of forming a semiconductor device structure, and methods of forming capacitor structures are also described.
Public/Granted literature
- US20150118821A1 METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES, AND METHODS OF FORMING CAPACITOR STRUCTURES Public/Granted day:2015-04-30
Information query
IPC分类:
