公开(公告)号：US20150118821A1

公开(公告)日：2015-04-30

申请号：US14065662

申请日：2013-10-29

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward ,  J. Neil Greeley

IPC: H01L21/306 ,  H01L21/02 ,  H01L49/02

CPC classification number: H01L28/40 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/31111 ,  H01L27/10808 ,  H01L27/10852 ,  H01L28/91

Abstract: A method of forming a semiconductor device structure comprises forming a mold template comprising trenches within a mold material. Structures are formed within the trenches of the mold template. A wet removal process is performed to remove the mold template, a liquid material of the wet removal process remaining at least in spaces between adjacent pairs of the structures following the wet removal process. A polymer material is formed at least in the spaces between the adjacent pairs of the structures. At least one dry removal process is performed to remove the polymer material from at least the spaces between the adjacent pairs of the structures. Additional methods of forming a semiconductor device structure, and methods of forming capacitor structures are also described.

Abstract translation: 形成半导体器件结构的方法包括在模具材料内形成包含沟槽的模具模板。 在模具模板的沟槽内形成结构。 执行湿移除过程以去除模具模板，湿移除过程的液体材料至少在湿移除过程之后的相邻结构对之间的空间中保留。 至少在相邻的结构对之间的空间中形成聚合物材料。 执行至少一个干移除处理以从至少相邻的结构对之间的空间去除聚合物材料。 还描述了形成半导体器件结构的附加方法以及形成电容器结构的方法。

公开(公告)号：US20160163536A1

公开(公告)日：2016-06-09

申请号：US15044713

申请日：2016-02-16

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward ,  Timothy A. Quick ,  J. Neil Greeley

IPC: H01L21/027 ,  H01L21/02

CPC classification number: H01L21/0271 ,  B82Y10/00 ,  B82Y40/00 ,  C08L53/00 ,  C08L53/005 ,  C09D153/00 ,  C09D153/005 ,  G03F7/0002 ,  H01L21/02323 ,  H01L21/28 ,  H01L29/06 ,  Y10S438/947 ,  Y10S977/888 ,  Y10S977/89 ,  C08L2666/02

Abstract: Methods of forming metal oxide structures and methods of forming metal oxide patterns on a substrate using a block copolymer system formulated for self-assembly. A block copolymer at least within a trench in the substrate and including at least one soluble block and at least one insoluble block may be annealed to form a self-assembled pattern including a plurality of repeating units of the at least one soluble block laterally aligned with the trench and positioned within a matrix of the at least one insoluble block. The self-assembled pattern may be exposed to a metal oxide precursor that impregnates the at least one soluble block. The metal oxide precursor may be oxidized to form a metal oxide. The self-assembled pattern may be removed to form a pattern of metal oxide lines on the substrate surface. Semiconductor device structures are also described.

Abstract translation: 使用配制用于自组装的嵌段共聚物体系形成金属氧化物结构的方法和在基材上形成金属氧化物图案的方法。 至少在衬底中的沟槽内并且包括至少一个可溶性嵌段和至少一个不溶性嵌段的嵌段共聚物可以被退火以形成自组装图案，其包括多个与所述至少一个可溶嵌段的重复单元横向对准 并且定位在所述至少一个不溶性块的基质内。 自组装图案可以暴露于浸渍至少一个可溶性嵌段的金属氧化物前体。 金属氧化物前体可以被氧化以形成金属氧化物。 可以去除自组装图案以在衬底表面上形成金属氧化物线的图案。 还描述了半导体器件结构。

公开(公告)号：US09768021B2

公开(公告)日：2017-09-19

申请号：US15044713

申请日：2016-02-16

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward ,  Timothy A. Quick ,  J. Neil Greeley

IPC: H01L21/326 ,  H01L21/479 ,  H01L21/027 ,  B82Y10/00 ,  B82Y40/00 ,  C08L53/00 ,  C09D153/00 ,  G03F7/00 ,  H01L21/28 ,  H01L29/06 ,  H01L21/02

CPC classification number: H01L21/0271 ,  B82Y10/00 ,  B82Y40/00 ,  C08L53/00 ,  C08L53/005 ,  C09D153/00 ,  C09D153/005 ,  G03F7/0002 ,  H01L21/02323 ,  H01L21/28 ,  H01L29/06 ,  Y10S438/947 ,  Y10S977/888 ,  Y10S977/89 ,  C08L2666/02

Abstract: Methods of forming metal oxide structures and methods of forming metal oxide patterns on a substrate using a block copolymer system formulated for self-assembly. A block copolymer at least within a trench in the substrate and including at least one soluble block and at least one insoluble block may be annealed to form a self-assembled pattern including a plurality of repeating units of the at least one soluble block laterally aligned with the trench and positioned within a matrix of the at least one insoluble block. The self-assembled pattern may be exposed to a metal oxide precursor that impregnates the at least one soluble block. The metal oxide precursor may be oxidized to form a metal oxide. The self-assembled pattern may be removed to form a pattern of metal oxide lines on the substrate surface. Semiconductor device structures are also described.

公开(公告)号：US20140225028A1

公开(公告)日：2014-08-14

申请号：US14253005

申请日：2014-04-15

Applicant: Micron Technology, Inc.

Inventor： Nishant Sinha ,  J. Neil Greeley

IPC: C09K13/08 ,  C09K13/06

CPC classification number: C09K13/08 ,  C09K13/06 ,  H01L21/31055 ,  H01L21/31111

Abstract: Methods for preventing isotropic removal of materials at corners faulted by seams, keyholes, and other anomalies in films or other structures include use of etch blockers to cover or coat such corners. This covering or coating prevents exposure of the corners to isotropic etch solutions and cleaning solutions and, thus, prevents higher material removal rates at the corners than at smoother areas of the structure or film. Solutions, including wet etchants and cleaning solutions, that include at least one type of etch blocker are also disclosed, as are systems for preventing higher rates of material removal at corners formed by seams, crevices, or recesses in a film or other structure. Semiconductor device structures in which etch blockers are located so as to prevent isotropic etchants from removing material from corners of seams, crevices, or recesses of a film or other structure at undesirably high rates are also disclosed.

Abstract translation: 在膜或其他结构中的接缝，键孔和其它异常现象的角落处的材料的各向同性去除方法包括使用蚀刻阻挡剂来覆盖或涂覆这些角。 这种覆盖物或涂层防止角部暴露于各向同性蚀刻溶液和清洁溶液，并且因此防止在角部比在结构或膜的平滑区域更高的材料去除速率。 还公开了包括至少一种类型的蚀刻阻挡剂的解决方案，包括湿蚀刻剂和清洁溶液，以及用于防止在膜或其它结构中由接缝，缝隙或凹陷形成的拐角处更高速率的材料去除的系统。 还公开了其中蚀刻阻挡剂被定位以防止各向同性蚀刻剂从不期望的高速率的接缝，裂缝或膜或其它结构的凹陷的角落移除材料的半导体器件结构。

公开(公告)号：US20140151843A1

公开(公告)日：2014-06-05

申请号：US14176574

申请日：2014-02-10

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward ,  Timothy A. Quick ,  J. Neil Greeley

IPC: H01L29/06 ,  H01L21/28

CPC classification number: H01L21/0271 ,  B82Y10/00 ,  B82Y40/00 ,  C08L53/00 ,  C08L53/005 ,  C09D153/00 ,  C09D153/005 ,  G03F7/0002 ,  H01L21/02323 ,  H01L21/28 ,  H01L29/06 ,  Y10S438/947 ,  Y10S977/888 ,  Y10S977/89 ,  C08L2666/02

Abstract: Methods of forming metal oxide structures and methods of forming metal oxide patterns on a substrate using a block copolymer system formulated for self-assembly. A block copolymer at least within a trench in the substrate and including at least one soluble block and at least one insoluble block may be annealed to form a self-assembled pattern including a plurality of repeating units of the at least one soluble block laterally aligned with the trench and positioned within a matrix of the at least one insoluble block. The self-assembled pattern may be exposed to a metal oxide precursor that impregnates the at least one soluble block. The metal oxide precursor may be oxidized to form a metal oxide. The self-assembled pattern may be removed to form a pattern of metal oxide lines on the substrate surface. Semiconductor device structures are also described.

Abstract translation: 使用配制用于自组装的嵌段共聚物体系形成金属氧化物结构的方法和在基材上形成金属氧化物图案的方法。 至少在衬底中的沟槽内并且包括至少一个可溶性嵌段和至少一个不溶性嵌段的嵌段共聚物可以被退火以形成自组装图案，其包括多个与所述至少一个可溶嵌段的重复单元横向对准 并且定位在所述至少一个不溶性块的基质内。 自组装图案可以暴露于浸渍至少一个可溶性嵌段的金属氧化物前体。 金属氧化物前体可以被氧化以形成金属氧化物。 可以去除自组装图案以在衬底表面上形成金属氧化物线的图案。 还描述了半导体器件结构。

公开(公告)号：US20180366538A1

公开(公告)日：2018-12-20

申请号：US16108788

申请日：2018-08-22

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward ,  J. Neil Greeley

IPC: H01L49/02 ,  H01L27/108 ,  H01L21/02 ,  H01L21/311

Abstract: A method of forming a semiconductor device structure comprises forming a mold template comprising trenches within a mold material. Structures are formed within the trenches of the mold template. A wet removal process is performed to remove the mold template, a liquid material of the wet removal process remaining at least in spaces between adjacent pairs of the structures following the wet removal process. A polymer material is formed at least in the spaces between the adjacent pairs of the structures. At least one dry removal process is performed to remove the polymer material from at least the spaces between the adjacent pairs of the structures. Additional methods of forming a semiconductor device structure, and methods of forming capacitor structures are also described.

公开(公告)号：US09276059B2

公开(公告)日：2016-03-01

申请号：US14176574

申请日：2014-02-10

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward ,  Timothy A. Quick ,  J. Neil Greeley

IPC: H01L23/58 ,  H01L29/06 ,  B82Y10/00 ,  B82Y40/00 ,  C08L53/00 ,  C09D153/00 ,  G03F7/00 ,  H01L21/28

CPC classification number: H01L21/0271 ,  B82Y10/00 ,  B82Y40/00 ,  C08L53/00 ,  C08L53/005 ,  C09D153/00 ,  C09D153/005 ,  G03F7/0002 ,  H01L21/02323 ,  H01L21/28 ,  H01L29/06 ,  Y10S438/947 ,  Y10S977/888 ,  Y10S977/89 ,  C08L2666/02

Abstract: Methods of forming metal oxide structures and methods of forming metal oxide patterns on a substrate using a block copolymer system formulated for self-assembly. A block copolymer at least within a trench in the substrate and including at least one soluble block and at least one insoluble block may be annealed to form a self-assembled pattern including a plurality of repeating units of the at least one soluble block laterally aligned with the trench and positioned within a matrix of the at least one insoluble block. The self-assembled pattern may be exposed to a metal oxide precursor that impregnates the at least one soluble block. The metal oxide precursor may be oxidized to form a metal oxide. The self-assembled pattern may be removed to form a pattern of metal oxide lines on the substrate surface. Semiconductor device structures are also described.

Abstract translation: 使用配制用于自组装的嵌段共聚物体系形成金属氧化物结构的方法和在基材上形成金属氧化物图案的方法。 至少在衬底中的沟槽内并且包括至少一个可溶性嵌段和至少一个不溶性嵌段的嵌段共聚物可以被退火以形成自组装图案，其包括多个重复单元，所述重复单元与至少一个可溶嵌段的重复单元横向对准 并且定位在所述至少一个不溶性块的基质内。 自组装图案可以暴露于浸渍至少一个可溶性嵌段的金属氧化物前体。 金属氧化物前体可以被氧化以形成金属氧化物。 可以去除自组装图案以在衬底表面上形成金属氧化物线的图案。 还描述了半导体器件结构。

公开(公告)号：US10090376B2

公开(公告)日：2018-10-02

申请号：US14065662

申请日：2013-10-29

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward ,  J. Neil Greeley

IPC: H01L21/306 ,  H01L21/02 ,  H01L49/02 ,  H01L21/311 ,  H01L27/108

Abstract: A method of forming a semiconductor device structure comprises forming a mold template comprising trenches within a mold material. Structures are formed within the trenches of the mold template. A wet removal process is performed to remove the mold template, a liquid material of the wet removal process remaining at least in spaces between adjacent pairs of the structures following the wet removal process. A polymer material is formed at least in the spaces between the adjacent pairs of the structures. At least one dry removal process is performed to remove the polymer material from at least the spaces between the adjacent pairs of the structures. Additional methods of forming a semiconductor device structure, and methods of forming capacitor structures are also described.

公开(公告)号：US09175217B2

公开(公告)日：2015-11-03

申请号：US14253005

申请日：2014-04-15

Applicant: Micron Technology, Inc.

Inventor： Nishant Sinha ,  J. Neil Greeley

IPC: C11D1/02 ,  C11D1/83 ,  C11D7/28 ,  C11D7/30 ,  C09K13/08 ,  H01L21/3105 ,  H01L21/311 ,  C09K13/06

CPC classification number: C09K13/08 ,  C09K13/06 ,  H01L21/31055 ,  H01L21/31111

Abstract: Methods for preventing isotropic removal of materials at corners faulted by seams, keyholes, and other anomalies in films or other structures include use of etch blockers to cover or coat such corners. This covering or coating prevents exposure of the corners to isotropic etch solutions and cleaning solutions and, thus, prevents higher material removal rates at the corners than at smoother areas of the structure or film. Solutions, including wet etchants and cleaning solutions, that include at least one type of etch blocker are also disclosed, as are systems for preventing higher rates of material removal at corners formed by seams, crevices, or recesses in a film or other structure. Semiconductor device structures in which etch blockers are located so as to prevent isotropic etchants from removing material from corners of seams, crevices, or recesses of a film or other structure at undesirably high rates are also disclosed.

Abstract translation: 在膜或其他结构中的接缝，键孔和其它异常现象的角落处的材料的各向同性去除方法包括使用蚀刻阻挡剂来覆盖或涂覆这些角。 这种覆盖物或涂层防止角部暴露于各向同性蚀刻溶液和清洁溶液，并且因此防止在角部比在结构或膜的平滑区域更高的材料去除速率。 还公开了包括至少一种类型的蚀刻阻挡剂的解决方案，包括湿蚀刻剂和清洁溶液，以及用于防止在膜或其它结构中由接缝，缝隙或凹陷形成的拐角处更高速率的材料去除的系统。 还公开了其中蚀刻阻挡剂被定位以防止各向同性蚀刻剂从不期望的高速率的接缝，裂缝或膜或其它结构的凹陷的角落移除材料的半导体器件结构。