• Patent Title: Photoactive devices having low bandgap active layers configured for improved efficiency and related methods
  • Application No.: US14768976
    Application Date: 2014-02-21
  • Publication No.: US10090432B2
    Publication Date: 2018-10-02
  • Inventor: Fred Newman
  • Applicant: Soitec
  • Applicant Address: FR Bernin
  • Assignee: SOITEC
  • Current Assignee: SOITEC
  • Current Assignee Address: FR Bernin
  • Agency: TraskBritt
  • International Application: PCT/IB2014/000211 WO 20140221
  • International Announcement: WO2014/135944 WO 20140912
  • Main IPC: H01L31/18
  • IPC: H01L31/18 H01L31/0236 H01L31/0687 H01L31/056 H01L31/028
Photoactive devices having low bandgap active layers configured for improved efficiency and related methods
Abstract:
Photoactive devices include an active region disposed between first and second electrodes and configured to absorb radiation and generate a voltage between the electrodes. The active region includes an active layer comprising a semiconductor material exhibiting a relatively low bandgap. The active layer has a front surface through which radiation enters the active layer and a relatively rougher back surface on an opposing side of the active layer. Methods of fabricating photoactive devices include the formation of such an active region and electrodes.
Information query
Patent Agency Ranking
0/0