公开(公告)号：US10014429B2

公开(公告)日：2018-07-03

申请号：US14749334

申请日：2015-06-24

Applicant: Soitec

Inventor： Fred Newman ,  Frank Reinhardt ,  Chantal Arena

IPC: H01L31/06 ,  H01L31/04 ,  H01L31/18 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/0304 ,  H01L31/043

CPC classification number: H01L31/0687 ,  H01L31/03042 ,  H01L31/03046 ,  H01L31/03048 ,  H01L31/043 ,  H01L31/0693 ,  H01L31/184 ,  H01L31/1844 ,  H01L31/1852 ,  H01L31/1892 ,  Y02E10/544

Abstract: A method of fabricating a semiconductor structure includes the formation of a first bonding layer at least substantially comprised of a first III-V material on a major surface of a first element, and formation of a second bonding layer at least substantially comprised of a second III-V material on a major surface of a second element. The first bonding layer and the second bonding layer are disposed between the first element and the second element, and the first element and the second element are attached to one another at a bonding interface disposed between the first bonding layer and the second bonding layer. Semiconductor structures are fabricated using such methods.

公开(公告)号：US20160005909A1

公开(公告)日：2016-01-07

申请号：US14768976

申请日：2014-02-21

Applicant: SOITEC

Inventor： Fred Newman

IPC: H01L31/0687 ,  H01L31/18 ,  H01L31/028 ,  H01L31/0236 ,  H01L31/056

CPC classification number: H01L31/1892 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/056 ,  H01L31/0687 ,  H01L31/06875 ,  H01L31/1808 ,  H01L31/186 ,  Y02E10/52 ,  Y02E10/544

Abstract: Photoactive devices include an active region disposed between first and second electrodes and is configured to absorb radiation and generate a voltage between the electrodes. The active region includes an active layer comprising a semiconductor material exhibiting a relatively low bandgap. The active layer has a front surface through which radiation enters the active layer and a relatively rougher back surface on an opposing side of the active layer. Methods of fabricating photoactive devices include the formation of such an active region and electrodes.

Abstract translation: 光活性器件包括设置在第一和第二电极之间的有源区，并且被配置为吸收辐射并在电极之间产生电压。 有源区包括有源层，其包括表现出相对较低带隙的半导体材料。 有源层具有前表面，辐射进入有源层，并且在有源层的相对侧上具有较粗糙的后表面。 制造光活性器件的方法包括形成这种有源区和电极。

公开(公告)号：US20150380592A1

公开(公告)日：2015-12-31

申请号：US14749334

申请日：2015-06-24

Applicant: Soitec

Inventor： Fred Newman ,  Frank Reinhardt ,  Chantal Arena

IPC: H01L31/0687 ,  H01L31/18 ,  H01L31/0693

CPC classification number: H01L31/0687 ,  H01L31/03042 ,  H01L31/03046 ,  H01L31/03048 ,  H01L31/043 ,  H01L31/0693 ,  H01L31/184 ,  H01L31/1844 ,  H01L31/1852 ,  H01L31/1892 ,  Y02E10/544

Abstract: A method of fabricating a semiconductor structure includes the formation of a first bonding layer at least substantially comprised of a first III-V material on major a surface of a first element, and formation of a second bonding layer at least substantially comprised of a second III-V material on a major surface of a second element. The first bonding layer and the second bonding layer are disposed between the first element and the second element, and the first element and the second element are attached to one another at a bonding interface disposed between the first bonding layer and the second bonding layer. Semiconductor structures are fabricated using such methods.

Abstract translation: 制造半导体结构的方法包括在第一元件的主表面上形成至少基本上由第一III-V材料构成的第一结合层，以及形成至少基本上由第二III -V材料在第二元件的主表面上。 第一接合层和第二接合层设置在第一元件和第二元件之间，并且第一元件和第二元件在设置在第一接合层和第二接合层之间的接合界面处彼此附接。 使用这种方法制造半导体结构。

公开(公告)号：US10090432B2

公开(公告)日：2018-10-02

申请号：US14768976

申请日：2014-02-21

Applicant: Soitec

Inventor： Fred Newman

IPC: H01L31/18 ,  H01L31/0236 ,  H01L31/0687 ,  H01L31/056 ,  H01L31/028

Abstract: Photoactive devices include an active region disposed between first and second electrodes and configured to absorb radiation and generate a voltage between the electrodes. The active region includes an active layer comprising a semiconductor material exhibiting a relatively low bandgap. The active layer has a front surface through which radiation enters the active layer and a relatively rougher back surface on an opposing side of the active layer. Methods of fabricating photoactive devices include the formation of such an active region and electrodes.