Invention Grant
- Patent Title: Semiconductor laser device
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Application No.: US15541515Application Date: 2016-01-07
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Publication No.: US10090636B2Publication Date: 2018-10-02
- Inventor: Yuu Takiguchi , Kazuyoshi Hirose , Yoshiro Nomoto , Takahiro Sugiyama , Yoshitaka Kurosaka
- Applicant: HAMAMATSU PHOTONICS K.K.
- Applicant Address: JP Hamamatsu-shi, Shizuoka
- Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee Address: JP Hamamatsu-shi, Shizuoka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2015-003557 20150109
- International Application: PCT/JP2016/050370 WO 20160107
- International Announcement: WO2016/111332 WO 20160714
- Main IPC: H01S5/02
- IPC: H01S5/02 ; G02F1/1335 ; G02B27/10 ; H01S5/18

Abstract:
Provided is a semiconductor laser device including a plurality of semiconductor laser units LDC that are capable of being independently driven, and a spatial light modulator SLM that is optically coupled to a group of the plurality of semiconductor laser units LDC. Each of the semiconductor laser units includes a pair of clad layers having an active layer 4 interposed therebetween, and a diffractive lattice layer 6 that is optically coupled to the active layer 4. The semiconductor laser device includes a ¼ wavelength plate 26 that is disposed between a group of the active layers 4 of the plurality of semiconductor laser units LDC and a reflection film 23, and a polarizing plate 27 that is disposed between the group of the active layers 4 of the plurality of semiconductor laser units LDC and a light emitting surface.
Public/Granted literature
- US20180006426A1 SEMICONDUCTOR LASER DEVICE Public/Granted day:2018-01-04
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