公开(公告)号：US11585696B2

公开(公告)日：2023-02-21

申请号：US17495995

申请日：2021-10-07

Applicant: HAMAMATSU PHOTONICS K.K. ,  The University of Tokyo

Inventor： Yoshiro Nomoto ,  Takuo Tanemura

IPC: G01J3/02 ,  G01N21/21 ,  G01J3/447 ,  G02B27/28

Abstract: An optical property evaluation apparatus evaluates an optical property of an evaluation object, and includes a light source, a polarization beam splitter, a polarization adjuster, a first detector, a second detector, and an analyzer. The analyzer obtains a reflectance when linearly polarized light in a specific direction is incident on the evaluation object based on the detection result by the first detector when the light with which the evaluation object is irradiated is set to be the linearly polarized light in the specific direction. The analyzer obtains a phase property at the reflection of the evaluation object based on the detection result by the first detector or the second detector when the light with which the evaluation object is irradiated is set to have a polarization state different from the linearly polarized light in the specific direction, and a Jones matrix.

公开(公告)号：US11502481B2

公开(公告)日：2022-11-15

申请号：US16432198

申请日：2019-06-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takahiro Sugiyama ,  Yuu Takiguchi ,  Yoshitaka Kurosaka ,  Kazuyoshi Hirose ,  Yoshiro Nomoto ,  Soh Uenoyama

IPC: H01S5/18 ,  H01S5/42 ,  H01S5/062 ,  H01S5/11

Abstract: A semiconductor light-emitting module according to the present embodiment includes a plurality of semiconductor light-emitting elements each outputting light of a desired beam projection pattern; and a support substrate holding the plurality of semiconductor light-emitting elements. Each of the plurality of semiconductor light-emitting elements includes a phase modulation layer configured to form a target beam projection pattern in a target beam projection region. The plurality of semiconductor light-emitting elements include first and second semiconductor light-emitting elements that are different in terms of at least any of a beam projection direction, the target beam projection pattern, and a light emission wavelength.

公开(公告)号：US11088511B2

公开(公告)日：2021-08-10

申请号：US16451580

申请日：2019-06-25

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshitaka Kurosaka ,  Yuu Takiguchi ,  Takahiro Sugiyama ,  Kazuyoshi Hirose ,  Yoshiro Nomoto

IPC: H01S5/00 ,  H01S5/183 ,  H01S5/42 ,  H01S5/11 ,  H01S5/0683 ,  H01S5/187

Abstract: In a semiconductor light emitting element provided with an active layer 4, a pair of cladding layers 2, 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4, the phase modulation layer 6 includes a base layer 6A and a plurality of different refractive index regions 6B having different refractive indices from the base layer 6A. When an XYZ orthogonal coordinate system having a thickness direction of the phase modulation layer 6 as a Z-axis direction is set and a square lattice of a virtual lattice constant a is set in an XY plane, each of the different refractive index regions 6B is disposed so that a centroid position G thereof is shifted from a lattice point position in a virtual square lattice by a distance r, and the distance r is 0

公开(公告)号：US09991669B2

公开(公告)日：2018-06-05

申请号：US15656096

申请日：2017-07-21

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuyoshi Hirose ,  Yoshitaka Kurosaka ,  Takahiro Sugiyama ,  Yuu Takiguchi ,  Yoshiro Nomoto

IPC: H01S5/00 ,  H01S5/183 ,  H01S5/026 ,  H01S5/187

CPC classification number: H01S5/0085 ,  H01S5/0265 ,  H01S5/183 ,  H01S5/18338 ,  H01S5/18363 ,  H01S5/18386 ,  H01S5/18391 ,  H01S5/18394 ,  H01S5/187

Abstract: The embodiment relates to a semiconductor light-emitting device comprising a semiconductor substrate, a first cladding layer, an active layer, a second cladding layer, a contact layer, and a phase modulation layer located between the first cladding and active layers or between the active and second cladding layers. The phase modulation layer comprises a basic layer and plural first modified refractive index regions different from the basic layer in a refractive index. In a virtual square lattice set on the phase modulation layer such that the modified refractive index region is allocated in each of unit constituent regions constituting square lattices, the modified refractive index region is arranged to allow its gravity center position to be separated from the lattice point of the corresponding unit constituent region, and to have a rotation angle about the lattice point according a desired optical image.

公开(公告)号：US11031747B2

公开(公告)日：2021-06-08

申请号：US16323625

申请日：2017-08-10

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshitaka Kurosaka ,  Kazuyoshi Hirose ,  Takahiro Sugiyama ,  Yuu Takiguchi ,  Yoshiro Nomoto

IPC: H01S5/183 ,  H01S5/042 ,  H01S5/028 ,  H01S5/06 ,  H01S5/343 ,  H01S5/42

Abstract: The present embodiment relates to a light emitting device having a structure capable of removing zero order light from output light of an S-iPM laser. The light emitting device includes a semiconductor light emitting element and a light shielding member. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a basic layer and a plurality of modified refractive index regions, each of which is individually disposed at a specific position. The light shielding member has a function of passing through a specific optical image output along an inclined direction and shielding zero order light output along a normal direction of a light emitting surface.

公开(公告)号：US20190356113A1

公开(公告)日：2019-11-21

申请号：US16451580

申请日：2019-06-25

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshitaka KUROSAKA ,  Yuu Takiguchi ,  Takahiro Sugiyama ,  Kazuyoshi Hirose ,  Yoshiro Nomoto

IPC: H01S5/183 ,  H01S5/42 ,  H01S5/10

Abstract: In a semiconductor light emitting element provided with an active layer 4, a pair of cladding layers 2, 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4, the phase modulation layer 6 includes a base layer 6A and a plurality of different refractive index regions 6B having different refractive indices from the base layer 6A. When an XYZ orthogonal coordinate system having a thickness direction of the phase modulation layer 6 as a Z-axis direction is set and a square lattice of a virtual lattice constant a is set in an XY plane, each of the different refractive index regions 6B is disposed so that a centroid position G thereof is shifted from a lattice point position in a virtual square lattice by a distance r, and the distance r is 0

公开(公告)号：US10161857B2

公开(公告)日：2018-12-25

申请号：US15301764

申请日：2015-04-03

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshiro Nomoto

IPC: G01N21/00 ,  G01N21/25 ,  G02B1/00 ,  G02B1/115 ,  G01N21/27 ,  G01N21/64 ,  G02B1/11 ,  G02B6/02 ,  G01N21/03 ,  G01N21/05 ,  G01N21/85 ,  G01N21/59

Abstract: A metamaterial optical member 100 includes a light collecting optical member 1 having a light-entering surface IN1 and a light-exiting surface OUT1 and having a light collecting function and an antireflection film 2 disposed in the light-exiting surface OUT1 of the light collecting optical member 1. The antireflection film 2 has a first metamaterial structure in which a refractive index is gradually reduced in the light travelling direction. The metamaterial optical member 100 includes the antireflection film 2 having the metamaterial structure, thereby externally extracting light.

公开(公告)号：US10090636B2

公开(公告)日：2018-10-02

申请号：US15541515

申请日：2016-01-07

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yuu Takiguchi ,  Kazuyoshi Hirose ,  Yoshiro Nomoto ,  Takahiro Sugiyama ,  Yoshitaka Kurosaka

IPC: H01S5/02 ,  G02F1/1335 ,  G02B27/10 ,  H01S5/18

Abstract: Provided is a semiconductor laser device including a plurality of semiconductor laser units LDC that are capable of being independently driven, and a spatial light modulator SLM that is optically coupled to a group of the plurality of semiconductor laser units LDC. Each of the semiconductor laser units includes a pair of clad layers having an active layer 4 interposed therebetween, and a diffractive lattice layer 6 that is optically coupled to the active layer 4. The semiconductor laser device includes a ¼ wavelength plate 26 that is disposed between a group of the active layers 4 of the plurality of semiconductor laser units LDC and a reflection film 23, and a polarizing plate 27 that is disposed between the group of the active layers 4 of the plurality of semiconductor laser units LDC and a light emitting surface.

公开(公告)号：US09948060B2

公开(公告)日：2018-04-17

申请号：US15538219

申请日：2015-12-24

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yuu Takiguchi ,  Kazuyoshi Hirose ,  Yoshitaka Kurosaka ,  Takahiro Sugiyama ,  Yoshiro Nomoto

IPC: H01S3/038 ,  H01S5/042 ,  H01S5/022 ,  H01S5/026 ,  H01S5/12 ,  H01S5/18 ,  H01S5/343

CPC classification number: H01S5/0425 ,  G02F1/13 ,  H01S3/1065 ,  H01S5/0228 ,  H01S5/026 ,  H01S5/0624 ,  H01S5/06243 ,  H01S5/105 ,  H01S5/12 ,  H01S5/14 ,  H01S5/18 ,  H01S5/18302 ,  H01S5/18361 ,  H01S5/34313 ,  H01S5/34353 ,  H01S2301/02 ,  H01S2301/20

Abstract: This semiconductor laser device includes a semiconductor laser chip and a spatial light modulator SLM optically coupled to the semiconductor laser chip. The semiconductor laser chip LDC includes an active layer 4, a pair of cladding layers 2 and 7 sandwiching the active layer 4, a diffraction grating layer 6 optically coupled to the active layer 4, and a drive electrode E3 that is disposed between the cladding layer 2 and the spatial light modulator SLM and supplies an electric current to the active layer 4, and the drive electrode E3 is positioned within an XY plane and has a plurality of openings as viewed from a Z-axis direction and has a non-periodic structure.

公开(公告)号：US09793681B2

公开(公告)日：2017-10-17

申请号：US14903466

申请日：2014-07-02

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yuu Takiguchi ,  Yoshiro Nomoto

IPC: H01S5/026 ,  H01S5/12 ,  H01S5/187 ,  G02F1/137 ,  G02F1/1335 ,  G02F1/29 ,  H01S5/00 ,  H01S5/343

CPC classification number: H01S5/026 ,  G02F1/1335 ,  G02F1/137 ,  G02F1/29 ,  G02F2001/291 ,  G02F2201/305 ,  G02F2202/32 ,  G02F2203/02 ,  G02F2203/12 ,  G02F2203/18 ,  G02F2203/50 ,  H01S5/0085 ,  H01S5/12 ,  H01S5/187 ,  H01S5/34313 ,  H01S5/3432 ,  H01S5/34353

Abstract: This semiconductor laser device includes a semiconductor laser chip and a spatial light modulator SLM which is optically connected to the semiconductor laser chip. The semiconductor laser chip LDC includes an active layer 4, a pair of cladding layers 2 and 7 sandwiching the active layer 4, and a diffraction grating layer 6 which is optically connected to the active layer 4. The spatial light modulator SLM includes a common electrode 25, a plurality of pixel electrodes 21, and a liquid crystal layer LC arranged between the common electrode 25 and the pixel electrodes 21. A laser beam output in a thickness direction of the diffraction grating layer 6 is modulated and reflected by the spatial light modulator SLM and is output to the outside.