Invention Grant
- Patent Title: Photoresist and method
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Application No.: US14334612Application Date: 2014-07-17
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Publication No.: US10095113B2Publication Date: 2018-10-09
- Inventor: Wei-Han Lai , Ching-Yu Chang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company
- Current Assignee: Taiwan Semiconductor Manufacturing Company
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: G03F7/039
- IPC: G03F7/039 ; G03F7/32 ; G03F7/20

Abstract:
Shrinkage and mass losses are reduced in photoresist exposure and post exposure baking by utilizing a small group which will decompose. Alternatively a bulky group which will not decompose or a combination of the small group which will decompose along with the bulky group which will not decompose can be utilized. Additionally, polar functional groups may be utilized in order to reduce the diffusion of reactants through the photoresist.
Public/Granted literature
- US20150160552A1 Photoresist and Method Public/Granted day:2015-06-11
Information query
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