Invention Grant
- Patent Title: Forming edge etch protection using dual layer of positive-negative tone resists
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Application No.: US15255237Application Date: 2016-09-02
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Publication No.: US10095115B2Publication Date: 2018-10-09
- Inventor: Christopher B. Shing , Joyce C. Liu , Richard D. Kaplan , Timothy J. Wiltshire , Darius Brown
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Gibb & Riley, LLC
- Agent Yuanmin Cai
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03F7/40 ; G03F7/32

Abstract:
Methods of forming edge etch protection using dual layers of positive-negative tone resists. According to a method, a wafer substrate is provided. A first type resist is deposited on a surface of the wafer substrate. The first type resist is patterned and a resist ring is created around a peripheral edge of the wafer substrate. The resist ring is cured. A second type resist is deposited on the surface of the wafer substrate and the resist ring. The second type resist is different from the first type resist.
Public/Granted literature
- US20180067396A1 FORMING EDGE ETCH PROTECTION USING DUAL LAYER OF POSITIVE-NEGATIVE TONE RESISTS Public/Granted day:2018-03-08
Information query
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