公开(公告)号：US10095115B2

公开(公告)日：2018-10-09

申请号：US15255237

申请日：2016-09-02

Applicant: GLOBALFOUNDRIES INC.

Inventor： Christopher B. Shing ,  Joyce C. Liu ,  Richard D. Kaplan ,  Timothy J. Wiltshire ,  Darius Brown

IPC: G03F7/20 ,  G03F7/40 ,  G03F7/32

Abstract: Methods of forming edge etch protection using dual layers of positive-negative tone resists. According to a method, a wafer substrate is provided. A first type resist is deposited on a surface of the wafer substrate. The first type resist is patterned and a resist ring is created around a peripheral edge of the wafer substrate. The resist ring is cured. A second type resist is deposited on the surface of the wafer substrate and the resist ring. The second type resist is different from the first type resist.