Techniques for writing magnetic random access memory (MRAM) using the spin hall effect with a self-reference read are provided. In one aspect, an MRAM device is provided. The MRAM device includes: a plurality of first spin hall wires oriented orthogonal to a plurality of second spin hall wires; a plurality of magnetic memory cells configured in an array between the first spin hall wires and the second spin hall wires; and a plurality of transistors connected to the magnetic memory cells by the first spin hall wires. Methods of operating an MRAM device are also provided.