Invention Grant
- Patent Title: Modified tungsten silicon
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Application No.: US14622997Application Date: 2015-02-16
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Publication No.: US10096609B2Publication Date: 2018-10-09
- Inventor: Nicolas L. Breil , Domingo A. Ferrer , Keith Kwong Hon Wong
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Yuanmin Cai
- Main IPC: H01L23/525
- IPC: H01L23/525 ; H01L27/112 ; H01L23/522 ; H01L23/532 ; H01L21/768
Abstract:
A method for forming a precision resistor or an e-fuse structure where tungsten silicon is used. The tungsten silicon layer is modified by changing the crystalline structure to a tetragonal tungsten silicon layer.
Public/Granted literature
- US20160240438A1 MODIFIED TUNGSTEN SILICON Public/Granted day:2016-08-18
Information query
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