公开(公告)号：US10096609B2

公开(公告)日：2018-10-09

申请号：US14622997

申请日：2015-02-16

Applicant: GLOBALFOUNDRIES INC.

Inventor： Nicolas L. Breil ,  Domingo A. Ferrer ,  Keith Kwong Hon Wong

IPC: H01L23/525 ,  H01L27/112 ,  H01L23/522 ,  H01L23/532 ,  H01L21/768

Abstract: A method for forming a precision resistor or an e-fuse structure where tungsten silicon is used. The tungsten silicon layer is modified by changing the crystalline structure to a tetragonal tungsten silicon layer.

公开(公告)号：US10192822B2

公开(公告)日：2019-01-29

申请号：US14623115

申请日：2015-02-16

Applicant: GLOBALFOUNDRIES INC.

Inventor： Domingo A. Ferrer ,  Kriteshwar K. Kohli ,  Siddarth A. Krishnan ,  Joseph F. Shepard, Jr. ,  Keith Kwong Hon Wong

IPC: H01L27/112 ,  H01L23/525 ,  H01L23/522 ,  H01L21/768

Abstract: A method for forming a precision resistor or an e-fuse structure where tungsten silicon is used. The tungsten silicon layer is modified by implanting nitrogen into the structure.

公开(公告)号：US09859403B1

公开(公告)日：2018-01-02

申请号：US15174147

申请日：2016-07-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Nicolas L. Breil ,  Neal A. Makela ,  Praneet Adusumilli ,  Domingo A. Ferrer

IPC: H01L29/417 ,  H01L29/66 ,  H01L29/04 ,  H01L29/08 ,  H01L21/285 ,  H01L29/78

CPC classification number: H01L29/66795 ,  H01L21/2855 ,  H01L29/045 ,  H01L29/0847 ,  H01L29/41791 ,  H01L29/785 ,  H01L2029/7858

Abstract: During a physical vapor deposition (PVD) process, the ion energy of a depositing species is controlled. By varying the ion energy throughout the process, the degree of conformality of the deposited layer over three-dimensional structures, including the extent to which the deposited layer merges between adjacent structures can be controlled.

公开(公告)号：US09691658B1

公开(公告)日：2017-06-27

申请号：US15159186

申请日：2016-05-19

Applicant: GLOBALFOUNDRIES INC.

Inventor： Emre Alptekin ,  Raghu Mangu ,  Cung D. Tran ,  Domingo A. Ferrer

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/3213 ,  H01L21/311

CPC classification number: H01L21/76865 ,  H01L21/31138 ,  H01L21/32139 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/485 ,  H01L23/53266

Abstract: A method of forming an electrical contact in an integrated circuit, and an integrated circuit are disclosed. In an embodiment, the integrated circuit comprises a substrate, an insulating layer, and a metal layer. An opening is formed through the insulating layer to expose an active area of the substrate. The metal layer forms a cusp at a top end of the opening, narrowing this end of the opening. In embodiments, the method comprises depositing a conductive layer in the opening to form a liner, applying a filler material inside the opening to protect a portion of the liner, removing the cusp to widen the top of the opening while the filler material protects the portion of the liner covered by this material, removing the filler material from the opening, re-lining the opening, and filling the opening with a conductive material to form a contact through the insulating layer.

公开(公告)号：US20180026118A1

公开(公告)日：2018-01-25

申请号：US15174147

申请日：2016-07-22

Applicant: GLOBALFOUNDRIES INC.

Inventor： Nicolas L. Breil ,  Neal A. Makela ,  Praneet Adusumilli ,  Domingo A. Ferrer

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/417 ,  H01L21/285 ,  H01L29/04 ,  H01L29/08

CPC classification number: H01L29/66795 ,  H01L21/2855 ,  H01L29/045 ,  H01L29/0847 ,  H01L29/41791 ,  H01L29/785 ,  H01L2029/7858

Abstract: During a physical vapor deposition (PVD) process, the ion energy of a depositing species is controlled. By varying the ion energy throughout the process, the degree of conformality of the deposited layer over three-dimensional structures, including the extent to which the deposited layer merges between adjacent structures can be controlled.

公开(公告)号：US09633946B1

公开(公告)日：2017-04-25

申请号：US15140121

申请日：2016-04-27

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jim Shih-Chun Liang ,  Domingo A. Ferrer ,  Kathryn T. Schonenberg ,  Shahrukh Akbar Khan ,  Wei-Tsu Tseng

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/532 ,  H01L23/528 ,  H01L23/522 ,  H01L21/768

CPC classification number: H01L21/76814 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/7688 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/53266

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to seamless metallization structures and methods of manufacture. A structure includes: a contact opening formed in an oxide material and in alignment with an underlying structure; a metal liner lining the sidewalls and bottom of the contact opening, in direct electrical contact with the underlying structure; a conductive liner on the metal liner, within the contact opening; and tungsten fill material on the conductive liner and within the contact opening.

公开(公告)号：US20160240478A1

公开(公告)日：2016-08-18

申请号：US14623115

申请日：2015-02-16

Applicant: GLOBALFOUNDRIES INC.

Inventor： Domingo A. Ferrer ,  Kriteshwar K. Kohli ,  Siddarth A. Krishnan ,  Joseph F. Shepard, JR. ,  Keith Kwong Hon Wong

IPC: H01L23/525 ,  H01L27/112

CPC classification number: H01L23/5256 ,  H01L21/76886 ,  H01L23/5228 ,  H01L27/11206

Abstract: A method for forming a precision resistor or an e-fuse structure where tungsten silicon is used. The tungsten silicon layer is modified by implanting nitrogen into the structure.

Abstract translation: 用于形成使用钨硅的精密电阻器或e熔丝结构的方法。 通过将氮注入结构来改变钨硅层。

公开(公告)号：US20160240438A1

公开(公告)日：2016-08-18

申请号：US14622997

申请日：2015-02-16

Applicant: GLOBALFOUNDRIES INC.

Inventor： Nicolas L. Breil ,  Domingo A. Ferrer ,  Keith Kwong Hon Wong

IPC: H01L21/768 ,  H01L27/112 ,  H01L23/525

CPC classification number: H01L27/11206 ,  H01L21/76886 ,  H01L23/5228 ,  H01L23/5256 ,  H01L23/53261

Abstract: A method for forming a precision resistor or an e-fuse structure where tungsten silicon is used. The tungsten silicon layer is modified by changing the crystalline structure to a tetragonal tungsten silicon layer.

Abstract translation: 用于形成使用钨硅的精密电阻器或e熔丝结构的方法。 通过将晶体结构改变为四方钨硅层来改变钨硅层。