Invention Grant
- Patent Title: Circuit structure, transistor and semiconductor device
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Application No.: US15412924Application Date: 2017-01-23
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Publication No.: US10096690B2Publication Date: 2018-10-09
- Inventor: Jiun-Lei Jerry Yu , Fu-Wei Yao , Chen-Ju Yu , Chun-Wei Hsu , King-Yuen Wong
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L27/092 ; H01L29/66 ; H01L29/778 ; H01L21/02 ; H01L29/20 ; H01L29/205 ; H01L29/40 ; H01L29/45
Abstract:
A circuit structure includes a substrate, a III-V semiconductor compound over the substrate, a AlxGa(1-X)N (AlGaN) layer over the III-V semiconductor compound, a gate over the AlGaN layer, a passivation film over the gate and over a portion of the AlGaN layer, a source structure, and a drain structure on an opposite side of the gate from the source structure, wherein X ranges from 0.1 to 1. The source structure has a source contact portion and an overhead portion. The overhead portion is over at least a portion of the passivation film between the source contact portion and the gate. A distance between the source contact portion and the gate is less than a distance between the gate and the drain structure.
Public/Granted literature
- US20170133484A1 CIRCUIT STRUCTURE, TRANSISTOR AND SEMICONDUCTOR DEVICE Public/Granted day:2017-05-11
Information query
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