Invention Grant
- Patent Title: Semiconductor structure
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Application No.: US15447081Application Date: 2017-03-01
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Publication No.: US10103273B2Publication Date: 2018-10-16
- Inventor: Zhibiao Zhou , Shao-Hui Wu , Chi-Fa Ku
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201510216493 20150430
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/786 ; H01L29/24 ; H01L29/04 ; H01L29/49 ; H01L29/51 ; H01L29/06
Abstract:
A semiconductor structure includes a substrate and a first element disposed in the substrate and arranged along a first direction. The first element is made of a semiconductor oxide material. The semiconductor structure also includes a dielectric layer disposed on the first element, and a second element, disposed on the dielectric layer and arranged along the first direction. The second element is used as a gate of a transistor structure.
Public/Granted literature
- US20170179295A1 SEMICONDUCTOR STRUCTURE Public/Granted day:2017-06-22
Information query
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