Invention Grant
- Patent Title: Quantum dot light-emitting diode and light-emitting display device using the diode
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Application No.: US15810688Application Date: 2017-11-13
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Publication No.: US10103345B2Publication Date: 2018-10-16
- Inventor: Kyung-Jin Yoon , Na-Yeon Lee
- Applicant: LG Display Co., Ltd.
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Morgan, Lewis & Bockius LLP
- Priority: KR10-2016-0151989 20161115
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L51/50 ; H01L29/66 ; H01L33/06 ; B82Y40/00

Abstract:
Provided are a quantum dot light-emitting diode including an interface control layer located between a luminous material layer using quantum dots as a luminous material and at least one charge transfer layer for supplying charges to the luminous material layer, and a quantum dot light-emitting display device including the same. Since the interface control layer is provided between the luminous material layer and the at least one charge transfer layer, the occurrence of an interface defect due to an interfacial energy mismatch between the luminous material layer and the at least one charge transfer layer may be prevented to obtain the luminous material layer including quantum dots with uniform morphology. Furthermore, since the interface control layer is used, oxygen or moisture may be prevented from permeating into the luminous material layer, thereby preventing degradation of the quantum dots used as a luminous material.
Public/Granted literature
- US20180138434A1 QUANTUM DOT LIGHT-EMITTING DIODE AND LIGHT-EMITTING DISPLAY DEVICE USING THE DIODE Public/Granted day:2018-05-17
Information query
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