Invention Grant
- Patent Title: Semiconductor device and communication circuit
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Application No.: US15617738Application Date: 2017-06-08
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Publication No.: US10103773B2Publication Date: 2018-10-16
- Inventor: Shinichi Uchida , Takafumi Kuramoto
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott, Will & Emery LLP
- Priority: JP2016-115317 20160609
- Main IPC: H04B1/44
- IPC: H04B1/44 ; H01L49/02 ; H01L23/58 ; H01L23/528 ; H01L23/552 ; H03F3/195 ; H01L27/06 ; H03B5/12 ; H01L23/522 ; H03F3/213 ; H04B5/00

Abstract:
A semiconductor device and a communication circuit capable of reducing the effect of a noise generated in an inductor are provided. A semiconductor device according to an embodiment includes a substrate, a first circuit disposed in a first area of the substrate, a second circuit disposed in a second area of the substrate, the second circuit being configured to operate selectively with the first circuit, a first inductor disposed in the second area and connected to the first circuit, and a second inductor disposed in the first area and connected to the second circuit.
Public/Granted literature
- US20170359097A1 SEMICONDUCTOR DEVICE AND COMMUNICATION CIRCUIT Public/Granted day:2017-12-14
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