公开(公告)号：US20160197066A1

公开(公告)日：2016-07-07

申请号：US14928780

申请日：2015-10-30

Applicant: Renesas Electronics Corporation

Inventor： Shinichi Uchida ,  Takafumi Kuramoto ,  Risho Koh

IPC: H01L25/00 ,  H01L49/02 ,  H01L23/522 ,  H01L21/56 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/02 ,  H01L25/065 ,  H01L21/768

CPC classification number: H01L21/56 ,  H01L21/02164 ,  H01L21/31051 ,  H01L21/31055 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/768 ,  H01L23/3107 ,  H01L23/3192 ,  H01L23/49575 ,  H01L23/5227 ,  H01L23/562 ,  H01L23/564 ,  H01L23/58 ,  H01L28/10 ,  H01L2224/05554 ,  H01L2224/32145 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/92147 ,  H01L2224/92247 ,  H01L2924/0002 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: An improvement is achieved in the reliability of a semiconductor device by preventing a dielectric breakdown between two semiconductor chips facing each other. During the manufacturing of first and second semiconductor chips, the process of planarizing the upper surfaces of insulating films is performed. Then, the first and second semiconductor chips are stacked via an insulating sheet with the respective insulating films of the first and second semiconductor chips facing each other such that the respective coils of the first and second semiconductor chips are magnetically coupled to each other.

Abstract translation: 通过防止两个彼此面对的半导体芯片之间的电介质击穿，可以提高半导体器件的可靠性。 在制造第一和第二半导体芯片期间，执行绝缘膜的上表面的平坦化处理。 然后，第一半导体芯片和第二半导体芯片通过绝缘片堆叠，其中第一和第二半导体芯片的各个绝缘膜彼此面对，使得第一和第二半导体芯片的各个线圈彼此磁耦合。

公开(公告)号：US10446543B2

公开(公告)日：2019-10-15

申请号：US15796816

申请日：2017-10-29

Applicant: Renesas Electronics Corporation

Inventor： Shinichi Uchida ,  Takafumi Kuramoto ,  Yasutaka Nakashiba

IPC: H01L29/06 ,  H01L27/06 ,  H01L29/94 ,  H01L21/84 ,  H01L23/522 ,  H01L23/528 ,  H01L27/12 ,  H01L29/66 ,  H01L29/93 ,  H01L23/485

Abstract: A semiconductor device of the present invention includes, in a region 1C, a top electrode made by a semiconductor layer of an SOI substrate, a capacitive insulating film made by an insulating layer, a bottom electrode made by a supporting board, and a lead part (a high-concentration impurity region of an n type) of the bottom electrode coupled to the supporting board. An SOI transistor in a region 1B is formed over a main surface of the semiconductor layer over the insulating layer as a thin film, and threshold voltage can be adjusted by applying a voltage to a well arranged on the rear face side of the insulating layer.

公开(公告)号：US10103773B2

公开(公告)日：2018-10-16

申请号：US15617738

申请日：2017-06-08

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Shinichi Uchida ,  Takafumi Kuramoto

IPC: H04B1/44 ,  H01L49/02 ,  H01L23/58 ,  H01L23/528 ,  H01L23/552 ,  H03F3/195 ,  H01L27/06 ,  H03B5/12 ,  H01L23/522 ,  H03F3/213 ,  H04B5/00

Abstract: A semiconductor device and a communication circuit capable of reducing the effect of a noise generated in an inductor are provided. A semiconductor device according to an embodiment includes a substrate, a first circuit disposed in a first area of the substrate, a second circuit disposed in a second area of the substrate, the second circuit being configured to operate selectively with the first circuit, a first inductor disposed in the second area and connected to the first circuit, and a second inductor disposed in the first area and connected to the second circuit.

公开(公告)号：US09558967B2

公开(公告)日：2017-01-31

申请号：US14928780

申请日：2015-10-30

Applicant: Renesas Electronics Corporation

Inventor： Shinichi Uchida ,  Takafumi Kuramoto ,  Risho Koh

IPC: H01L25/00 ,  H01L21/56 ,  H01L49/02 ,  H01L23/522 ,  H01L21/768 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/02 ,  H01L23/31 ,  H01L23/495 ,  H01L23/58

CPC classification number: H01L21/56 ,  H01L21/02164 ,  H01L21/31051 ,  H01L21/31055 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/768 ,  H01L23/3107 ,  H01L23/3192 ,  H01L23/49575 ,  H01L23/5227 ,  H01L23/562 ,  H01L23/564 ,  H01L23/58 ,  H01L28/10 ,  H01L2224/05554 ,  H01L2224/32145 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/92147 ,  H01L2224/92247 ,  H01L2924/0002 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: An improvement is achieved in the reliability of a semiconductor device by preventing a dielectric breakdown between two semiconductor chips facing each other. During the manufacturing of first and second semiconductor chips, the process of planarizing the upper surfaces of insulating films is performed. Then, the first and second semiconductor chips are stacked via an insulating sheet with the respective insulating films of the first and second semiconductor chips facing each other such that the respective coils of the first and second semiconductor chips are magnetically coupled to each other.

Abstract translation: 通过防止两个彼此面对的半导体芯片之间的电介质击穿，可以提高半导体器件的可靠性。 在制造第一和第二半导体芯片期间，执行绝缘膜的上表面的平坦化处理。 然后，第一半导体芯片和第二半导体芯片通过绝缘片堆叠，其中第一和第二半导体芯片的各个绝缘膜彼此面对，使得第一和第二半导体芯片的各个线圈彼此磁耦合。