- 专利标题： Under bump metallurgy (UBM) and methods of forming same
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申请号： US15722578申请日： 2017-10-02
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公开(公告)号： US10109607B2公开(公告)日： 2018-10-23
- 发明人: Wei-Yu Chen , Hsien-Wei Chen , An-Jhih Su , Cheng-Hsien Hsieh
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; H01L23/498 ; H01L21/768
摘要：
A device package includes a die, fan-out redistribution layers (RDLs) over the die, and an under bump metallurgy (UBM) over the fan-out RDLs. The UBM comprises a conductive pad portion and a trench encircling the conductive pad portion. The device package further includes a connector disposed on the conductive pad portion of the UBM. The fan-out RDLs electrically connect the connector and the UBM to the die.
公开/授权文献
- US20180026002A1 Under Bump Metallurgy (UBM) And Methods Of Forming Same 公开/授权日：2018-01-25
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