Invention Grant
- Patent Title: Semiconductor device having germanium layer as channel region and method for manufacturing the same
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Application No.: US15523603Application Date: 2015-11-02
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Publication No.: US10109710B2Publication Date: 2018-10-23
- Inventor: Akira Toriumi , Choong-hyun Lee , Tomonori Nishimura
- Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
- Applicant Address: JP Kawaguchi-shi, Saitama
- Assignee: Japan Science and Technology Agency
- Current Assignee: Japan Science and Technology Agency
- Current Assignee Address: JP Kawaguchi-shi, Saitama
- Agency: Amster, Rothstein & Ebenstein LLP
- Priority: JP2014-225622 20141105
- International Application: PCT/JP2015/080954 WO 20151102
- International Announcement: WO2016/072398 WO 20160512
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/08 ; H01L29/167 ; H01L29/10 ; H01L21/223 ; H01L29/04 ; H01L29/78
Abstract:
A semiconductor device having a channel region that is formed in a germanium layer and has a first conductive type, and a source region and a drain region that are formed in the germanium layer and have a second conductive type different from the first conductive type, wherein an oxygen concentration in the channel region is less than an oxygen concentration in a junction interface between at least one of the source region and the drain region and a region that surrounds the at least one of the source region and the drain region and has the first conductive type.
Public/Granted literature
- US20170317170A1 SEMICONDUCTOR DEVICE HAVING GERMANIUM LAYER AS CHANNEL REGION AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2017-11-02
Information query
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