公开(公告)号：US20190228978A1

公开(公告)日：2019-07-25

申请号：US16326521

申请日：2017-02-23

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Akira Toriumi ,  Tomonori Nishimura

IPC: H01L21/285 ,  H01L29/417 ,  H01L29/78 ,  H01L29/872

Abstract: In the present invention, a contact layer formed of a material having an electron concentration of less than 1×1022 cm−3 is directly provided on a surface of a semiconductor crystal having an n-type conductivity with a band gap of 1.2 eV or less at room temperature. Consequently, the wave function penetration from the contact layer side to the semiconductor surface side is reduced. As a result, the formation of the energy barrier height·ϕB due to the Fermi level pinning phenomenon is much suppressed. It is possible to achieve the contact with a lower resistivity and with high ohmic properties.

公开(公告)号：US09691620B2

公开(公告)日：2017-06-27

申请号：US14423627

申请日：2013-04-18

Applicant: Japan Science and Technology Agency

Inventor： Akira Toriumi ,  Choong-hyun Lee

IPC: H01L21/02 ,  H01L23/58 ,  H01L21/31 ,  H01L21/28 ,  H01L29/78 ,  H01L29/51 ,  H01L29/16

CPC classification number: H01L21/28255 ,  H01L21/02112 ,  H01L21/02175 ,  H01L21/022 ,  H01L21/02236 ,  H01L21/02255 ,  H01L29/16 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78

Abstract: A semiconductor structure includes: a germanium layer 30; and an insulating film that has a film 32 that includes a germanium oxide and is formed on the germanium layer and a high dielectric oxide film 34 that is formed on the film including the germanium oxide and has a dielectric constant higher than that of a silicon oxide, wherein: an EOT of the insulating film is 2 nm or less; and on a presumption that an Au acting as a metal film is formed on the insulating film, a leak current density is 10−5×EOT+4 A/cm2 or less in a case where a voltage of the metal film with respect to the germanium layer is applied from a flat band voltage to an accumulation region side by 1 V.

公开(公告)号：US09647074B2

公开(公告)日：2017-05-09

申请号：US15031437

申请日：2014-10-10

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Akira Toriumi ,  Choong-hyun Lee ,  Tomonori Nishimura

IPC: H01L29/36 ,  H01L21/28 ,  H01L21/322 ,  H01L21/324 ,  H01L29/16 ,  H01L29/78 ,  H01L29/51

CPC classification number: H01L29/36 ,  H01L21/28255 ,  H01L21/322 ,  H01L21/324 ,  H01L21/3247 ,  H01L29/16 ,  H01L29/517 ,  H01L29/78

Abstract: A method of manufacturing a semiconductor substrate includes: heat-treating a germanium layer 30 with an oxygen concentration of 1×1016 cm−3 or greater in a reducing gas atmosphere at 700° C. or greater. Alternatively, a method of manufacturing a semiconductor substrate includes heat-treating a germanium layer 30 having an oxygen concentration of 1×1016 cm−3 or greater in a reducing gas atmosphere so that the oxygen concentration decreases.

公开(公告)号：US20220393563A1

公开(公告)日：2022-12-08

申请号：US17769919

申请日：2020-10-28

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Takeaki Yajima ,  Akira Toriumi

IPC: H02M1/00 ,  H02M7/12 ,  H02M3/156 ,  G01R15/09

Abstract: A current sensor includes an element that is in a high-resistance state when an absolute value of a current flowing between a first terminal and a second terminal is within a first range, and changes to a low-resistance state in which a resistance value is lower than that in the high-resistance state when the absolute value of the current exceeds the first range, and a circuit that supplies a current to be measured to the element, and senses a value of the current to be measured based on at least one of voltages of the first terminal and the second terminal.

公开(公告)号：US10748776B2

公开(公告)日：2020-08-18

申请号：US16326521

申请日：2017-02-23

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Akira Toriumi ,  Tomonori Nishimura

IPC: H01L21/285 ,  H01L29/78 ,  H01L29/45 ,  H01L21/28 ,  H01L29/16 ,  H01L29/417 ,  H01L29/872

Abstract: In the present invention, a contact layer formed of a material having an electron concentration of less than 1×1022 cm−3 is directly provided on a surface of a semiconductor crystal having an n-type conductivity with a band gap of 1.2 eV or less at room temperature. Consequently, the wave function penetration from the contact layer side to the semiconductor surface side is reduced. As a result, the formation of the energy barrier height·ϕB due to the Fermi level pinning phenomenon is much suppressed. It is possible to achieve the contact with a lower resistivity and with high ohmic properties.

公开(公告)号：US10109710B2

公开(公告)日：2018-10-23

申请号：US15523603

申请日：2015-11-02

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Akira Toriumi ,  Choong-hyun Lee ,  Tomonori Nishimura

IPC: H01L29/66 ,  H01L29/08 ,  H01L29/167 ,  H01L29/10 ,  H01L21/223 ,  H01L29/04 ,  H01L29/78

Abstract: A semiconductor device having a channel region that is formed in a germanium layer and has a first conductive type, and a source region and a drain region that are formed in the germanium layer and have a second conductive type different from the first conductive type, wherein an oxygen concentration in the channel region is less than an oxygen concentration in a junction interface between at least one of the source region and the drain region and a region that surrounds the at least one of the source region and the drain region and has the first conductive type.

公开(公告)号：US09722026B2

公开(公告)日：2017-08-01

申请号：US14914310

申请日：2014-06-06

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Akira Toriumi ,  Toshiyuki Tabata ,  Choong Hyun Lee ,  Tomonori Nishimura ,  Cimang Lu

IPC: H01L21/16 ,  H01L21/02 ,  H01L21/28 ,  H01L21/324 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78 ,  H01L29/16 ,  C23C14/08 ,  C23C14/35

CPC classification number: H01L29/16 ,  C23C14/083 ,  C23C14/086 ,  C23C14/352 ,  H01L21/02112 ,  H01L21/02266 ,  H01L21/28255 ,  H01L21/3247 ,  H01L29/517 ,  H01L29/66477 ,  H01L29/78

Abstract: A semiconductor structure includes: a germanium layer; and a first insulating film that is formed on an upper surface of the germanium layer, primarily contains germanium oxide and a substance having an oxygen potential lower than an oxygen potential of germanium oxide, and has a physical film thickness of 3 nm or less; wherein a half width of frequency to height in a 1 μm square area of the upper surface of the germanium layer is 0.7 nm or less.

公开(公告)号：US12095348B2

公开(公告)日：2024-09-17

申请号：US17769919

申请日：2020-10-28

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Takeaki Yajima ,  Akira Toriumi

IPC: H02M1/00 ,  G01R15/09 ,  H02M3/156 ,  H02M7/12

CPC classification number: H02M1/0009 ,  G01R15/09 ,  H02M3/156 ,  H02M7/12

Abstract: A current sensor includes an element that is in a high-resistance state when an absolute value of a current flowing between a first terminal and a second terminal is within a first range, and changes to a low-resistance state in which a resistance value is lower than that in the high-resistance state when the absolute value of the current exceeds the first range, and a circuit that supplies a current to be measured to the element, and senses a value of the current to be measured based on at least one of voltages of the first terminal and the second terminal.

公开(公告)号：US11157805B2

公开(公告)日：2021-10-26

申请号：US16464472

申请日：2017-07-18

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Takeaki Yajima ,  Akira Toriumi

IPC: G06N3/063 ,  G11C11/54 ,  G11C13/00 ,  H01L49/02

Abstract: A neuron circuit includes: an input terminal to which spike signals are continuously input; a first switch element that has a first end coupled to the input terminal and a second end coupled to a node, remains in a high resistance state even when a single spike signal is input, and goes into a low resistance state when spike signals are input within a time period; a feedback circuit coupled to the node, and causing the input terminal to be at a level when the first switch element goes into the low resistance state; and a second switch element that is connected in series with the first switch element between the input terminal and the node, remains in a low resistance state even when spike signals are input to the input terminal, and goes into a high resistance state when the input terminal becomes at the level.

公开(公告)号：US09306026B2

公开(公告)日：2016-04-05

申请号：US14630198

申请日：2015-02-24

Applicant: Japan Science and Technology Agency

Inventor： Akira Toriumi ,  Toshiyuki Tabata

IPC: H01L27/01 ,  H01L29/51 ,  H01L29/78 ,  H01L21/02 ,  H01L21/28 ,  H01L29/16 ,  H01L21/3105

CPC classification number: H01L29/517 ,  H01L21/02178 ,  H01L21/02266 ,  H01L21/02318 ,  H01L21/02337 ,  H01L21/28255 ,  H01L21/3105 ,  H01L29/16 ,  H01L29/512 ,  H01L29/513 ,  H01L29/518 ,  H01L29/78

Abstract: A semiconductor structure includes: a germanium layer 30; and an aluminum oxynitride film 32 that is formed on the germanium layer, wherein: an EOT of the aluminum oxynitride film is 2 nm or less; Cit/Cacc is 0.4 or less; on a presumption that Au acting as a metal film is formed on the aluminum oxynitride film, the Cit is a capacitance value between the germanium layer and the metal film at a frequency of 1 MHz in a case where a voltage of the metal film with respect to the germanium layer is applied to an inversion region side by 0.5 V; and the Cacc is a capacitance value between the germanium layer and the metal film in an accumulation region.

Abstract translation: 半导体结构包括：锗层30; 以及形成在锗层上的氧氮化铝膜32，其中：氮氧化铝膜的EOT为2nm以下; Cit / Cacc为0.4以下; 假设在氧氮化铝膜上形成作为金属膜的金属，则Cit为金属膜的电压相对于1MHz时的锗层与金属膜之间的电容值 到锗层被反向区域侧施加0.5V; 并且Cacc是在积聚区域中的锗层和金属膜之间的电容值。