Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15812527Application Date: 2017-11-14
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Publication No.: US10109738B2Publication Date: 2018-10-23
- Inventor: Sung-soo Kim , Song-E Kim , Koung-Min Ryu , Sun-Ki Min
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2015-0115382 20150817
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/00 ; H01L29/78 ; H01L27/12
Abstract:
A semiconductor device is provided that includes a deep trench defining an active region, and a fin-type pattern protruding within the active region. The fin-type pattern having a lower portion, an upper portion of a narrower width than the lower portion, and a first stepped portion formed at a boundary between the upper portion and the lower portion. The device also includes a first field insulating film surrounding the lower portion and a second field insulating film formed on the first field insulating film and partially surrounding the upper portion.
Public/Granted literature
- US20180102429A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-04-12
Information query
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