Integrated Circuit Devices
    3.
    发明申请

    公开(公告)号:US20170309625A1

    公开(公告)日:2017-10-26

    申请号:US15455986

    申请日:2017-03-10

    Abstract: An integrated circuit device includes a fin-type active area extending on a substrate in a first direction, a first gate line and a second gate line extending on the fin-type active area in parallel to each other in a second direction, which is different from the first direction, a first insulating capping layer covering an upper surface of the first gate line and extending in parallel to the first gate line, a second insulating capping layer covering an upper surface of the second gate line and extending in parallel to the second gate line, wherein a height of the first gate line and a height of the second gate line are different from each other.

    Semiconductor device
    8.
    发明授权

    公开(公告)号:US10109738B2

    公开(公告)日:2018-10-23

    申请号:US15812527

    申请日:2017-11-14

    Abstract: A semiconductor device is provided that includes a deep trench defining an active region, and a fin-type pattern protruding within the active region. The fin-type pattern having a lower portion, an upper portion of a narrower width than the lower portion, and a first stepped portion formed at a boundary between the upper portion and the lower portion. The device also includes a first field insulating film surrounding the lower portion and a second field insulating film formed on the first field insulating film and partially surrounding the upper portion.

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