- 专利标题: Eliminating emissive sub-bandgap states in nanocrystals
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申请号: US15095001申请日: 2016-04-08
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公开(公告)号: US10109760B2公开(公告)日: 2018-10-23
- 发明人: Gyuweon Hwang , Donghun Kim , Jose M. Cordero , Mark W. B. Wilson , Chia-Hao M. Chuang , Jeffrey C. Grossman , Moungi G. Bawendi
- 申请人: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
- 申请人地址: US MA Cambridge
- 专利权人: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
- 当前专利权人: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
- 当前专利权人地址: US MA Cambridge
- 代理机构: Steptoe & Johnson LLP
- 主分类号: H01L31/18
- IPC分类号: H01L31/18 ; H01L31/036 ; H01L31/032 ; H01L31/0445 ; H01L51/00 ; H01L31/0352 ; H01L51/42
摘要:
The size-dependent band-gap tunability and solution processability of nanocrystals (NCs) make them attractive candidates for optoelectronic applications. One factor that presently limits the device performance of NC thin films is sub-bandgap states, also referred to as trap states. Trap states can be controlled by surface treatment of the nanocrystals.
公开/授权文献
- US20160336477A1 ELIMINATING EMISSIVE SUB-BANDGAP STATES IN NANOCRYSTALS 公开/授权日:2016-11-17
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