公开(公告)号：US10711183B2

公开(公告)日：2020-07-14

申请号：US15256521

申请日：2016-09-03

Applicant: Massachusetts Institute of Technology

Inventor： Jose M. Cordero ,  Yue Chen ,  Moungi G. Bawendi

IPC: C09K11/02 ,  C09K11/66 ,  C09K11/88 ,  B82Y40/00 ,  B82Y30/00 ,  B82Y20/00

Abstract: A nanocrystal composition can include a nanocrystal and an outer layer including a ligand bound to the nanocrystal, wherein the ligand includes a norbornene group and a carboxyl group.

公开(公告)号：US20160336477A1

公开(公告)日：2016-11-17

申请号：US15095001

申请日：2016-04-08

Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY

Inventor： Gyuweon Hwang ,  Donghun Kim ,  Jose M. Cordero ,  Mark W. B. Wilson ,  Chia-Hao M. Chuang ,  Jeffrey C. Grossman ,  Moungi G. Bawendi

IPC: H01L31/18 ,  H01L51/00 ,  H01L31/0445 ,  H01L31/036 ,  H01L31/032

CPC classification number: H01L31/18 ,  H01L31/0324 ,  H01L31/035218 ,  H01L31/036 ,  H01L31/0445 ,  H01L51/0001 ,  H01L51/0077 ,  H01L51/42 ,  H01L51/502

Abstract: The size-dependent band-gap tunability and solution processability of nanocrystals (NCs) make them attractive candidates for optoelectronic applications. One factor that presently limits the device performance of NC thin films is sub-bandgap states, also referred to as trap states. Trap states can be controlled by surface treatment of the nanocrystals.

Abstract translation: 纳米晶体（NC）的尺寸依赖带隙可调性和溶液可加工性使其成为光电子应用的有吸引力的候选者。 目前限制NC薄膜的器件性能的一个因素是子带隙状态，也称为陷阱状态。 陷阱状态可以通过纳米晶体的表面处理来控制。

公开(公告)号：US10109760B2

公开(公告)日：2018-10-23

申请号：US15095001

申请日：2016-04-08

Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY

Inventor： Gyuweon Hwang ,  Donghun Kim ,  Jose M. Cordero ,  Mark W. B. Wilson ,  Chia-Hao M. Chuang ,  Jeffrey C. Grossman ,  Moungi G. Bawendi

IPC: H01L31/18 ,  H01L31/036 ,  H01L31/032 ,  H01L31/0445 ,  H01L51/00 ,  H01L31/0352 ,  H01L51/42

Abstract: The size-dependent band-gap tunability and solution processability of nanocrystals (NCs) make them attractive candidates for optoelectronic applications. One factor that presently limits the device performance of NC thin films is sub-bandgap states, also referred to as trap states. Trap states can be controlled by surface treatment of the nanocrystals.

公开(公告)号：US20170198217A1

公开(公告)日：2017-07-13

申请号：US15256521

申请日：2016-09-03

Applicant: Massachusetts Institute of Technology

Inventor： Jose M. Cordero ,  Yue Chen ,  Moungi G. Bawendi

IPC: C09K11/02 ,  C09K11/88

CPC classification number: C09K11/025 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C09K11/02 ,  C09K11/663 ,  C09K11/883 ,  Y10S977/774 ,  Y10S977/824 ,  Y10S977/892 ,  Y10S977/896 ,  Y10S977/95

Abstract: A nanocrystal composition can include a nanocrystal and an outer layer including a ligand bound to the nanocyrstal, wherein the ligand includes a norbornene group and a carboxyl group.