公开(公告)号：US10109760B2

公开(公告)日：2018-10-23

申请号：US15095001

申请日：2016-04-08

申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY

发明人： Gyuweon Hwang ,  Donghun Kim ,  Jose M. Cordero ,  Mark W. B. Wilson ,  Chia-Hao M. Chuang ,  Jeffrey C. Grossman ,  Moungi G. Bawendi

IPC分类号： H01L31/18 ,  H01L31/036 ,  H01L31/032 ,  H01L31/0445 ,  H01L51/00 ,  H01L31/0352 ,  H01L51/42

摘要： The size-dependent band-gap tunability and solution processability of nanocrystals (NCs) make them attractive candidates for optoelectronic applications. One factor that presently limits the device performance of NC thin films is sub-bandgap states, also referred to as trap states. Trap states can be controlled by surface treatment of the nanocrystals.

公开(公告)号：US20160336477A1

公开(公告)日：2016-11-17

申请号：US15095001

申请日：2016-04-08

申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY

发明人： Gyuweon Hwang ,  Donghun Kim ,  Jose M. Cordero ,  Mark W. B. Wilson ,  Chia-Hao M. Chuang ,  Jeffrey C. Grossman ,  Moungi G. Bawendi

IPC分类号： H01L31/18 ,  H01L51/00 ,  H01L31/0445 ,  H01L31/036 ,  H01L31/032

CPC分类号： H01L31/18 ,  H01L31/0324 ,  H01L31/035218 ,  H01L31/036 ,  H01L31/0445 ,  H01L51/0001 ,  H01L51/0077 ,  H01L51/42 ,  H01L51/502

摘要： The size-dependent band-gap tunability and solution processability of nanocrystals (NCs) make them attractive candidates for optoelectronic applications. One factor that presently limits the device performance of NC thin films is sub-bandgap states, also referred to as trap states. Trap states can be controlled by surface treatment of the nanocrystals.

摘要翻译： 纳米晶体（NC）的尺寸依赖带隙可调性和溶液可加工性使其成为光电子应用的有吸引力的候选者。 目前限制NC薄膜的器件性能的一个因素是子带隙状态，也称为陷阱状态。 陷阱状态可以通过纳米晶体的表面处理来控制。