- 专利标题: Air gap spacer formation for nano-scale semiconductor devices
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申请号: US15789416申请日: 2017-10-20
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公开(公告)号: US10115629B2公开(公告)日: 2018-10-30
- 发明人: Kangguo Cheng , Thomas J. Haigh , Juntao Li , Eric G. Liniger , Sanjay C. Mehta , Son V. Nguyen , Chanro Park , Tenko Yamashita
- 申请人: International Business Machines Corporation
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Ryan, Mason & Lewis, LLP
- 代理商 Vazken Alexanian
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/768 ; H01L21/02 ; H01L23/528 ; H01L23/532 ; H01L29/417 ; H01L29/66 ; H01L29/49
摘要:
Semiconductor devices having air gap spacers that are formed as part of BEOL or MOL layers of the semiconductor devices are provided, as well as methods for fabricating such air gap spacers. For example, a method comprises forming a first metallic structure and a second metallic structure on a substrate, wherein the first and second metallic structures are disposed adjacent to each other with insulating material disposed between the first and second metallic structures. The insulating material is etched to form a space between the first and second metallic structures. A layer of dielectric material is deposited over the first and second metallic structures using a pinch-off deposition process to form an air gap in the space between the first and second metallic structures, wherein a portion of the air gap extends above an upper surface of at least one of the first metallic structure and the second metallic structure.
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