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公开(公告)号：US10115629B2
公开(公告)日：2018-10-30
申请号：US15789416
申请日：2017-10-20
发明人： Kangguo Cheng , Thomas J. Haigh , Juntao Li , Eric G. Liniger , Sanjay C. Mehta , Son V. Nguyen , Chanro Park , Tenko Yamashita
IPC分类号： H01L29/78 , H01L21/768 , H01L21/02 , H01L23/528 , H01L23/532 , H01L29/417 , H01L29/66 , H01L29/49
摘要： Semiconductor devices having air gap spacers that are formed as part of BEOL or MOL layers of the semiconductor devices are provided, as well as methods for fabricating such air gap spacers. For example, a method comprises forming a first metallic structure and a second metallic structure on a substrate, wherein the first and second metallic structures are disposed adjacent to each other with insulating material disposed between the first and second metallic structures. The insulating material is etched to form a space between the first and second metallic structures. A layer of dielectric material is deposited over the first and second metallic structures using a pinch-off deposition process to form an air gap in the space between the first and second metallic structures, wherein a portion of the air gap extends above an upper surface of at least one of the first metallic structure and the second metallic structure.
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公开(公告)号：US20180047615A1
公开(公告)日：2018-02-15
申请号：US15232341
申请日：2016-08-09
发明人： Kangguo Cheng , Thomas J. Haigh , Juntao Li , Eric G. Liniger , Sanjay C. Mehta , Son V. Nguyen , Chanro Park , Tenko Yamashita
IPC分类号： H01L21/768 , H01L23/528 , H01L21/02 , H01L23/532
CPC分类号： H01L21/7682 , H01L21/02126 , H01L21/02167 , H01L21/0217 , H01L21/02274 , H01L21/76852 , H01L23/528 , H01L23/5329 , H01L29/41775 , H01L29/4991 , H01L29/6653 , H01L29/66795 , H01L29/785
摘要： Semiconductor devices having air gap spacers that are formed as part of BEOL or MOL layers of the semiconductor devices are provided, as well as methods for fabricating such air gap spacers. For example, a method comprises forming a first metallic structure and a second metallic structure on a substrate, wherein the first and second metallic structures are disposed adjacent to each other with insulating material disposed between the first and second metallic structures. The insulating material is etched to form a space between the first and second metallic structures. A layer of dielectric material is deposited over the first and second metallic structures using a pinch-off deposition process to form an air gap in the space between the first and second metallic structures, wherein a portion of the air gap extends above an upper surface of at least one of the first metallic structure and the second metallic structure.
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3.发明授权Interconnect structure containing a porous low k interconnect dielectric/dielectric cap 有权互连结构包含多孔低k互连电介质/电介质盖公开(公告)号：US09312224B1
公开(公告)日：2016-04-12
申请号：US14567537
申请日：2014-12-11
发明人： Donald F. Canaperi , Alfred Grill , Thomas J. Haigh , Son V. Nguyen , Takeshi Nogami , Deepika Priyadarshini , Hosadurga Shobha , Matthew T. Shoudy
IPC分类号： H01L23/58 , H01L23/532 , H01L21/768 , H01L21/02
CPC分类号： H01L23/5329 , H01L21/7682 , H01L21/76831 , H01L21/76834 , H01L21/76835 , H01L21/76843 , H01L21/76855 , H01L21/76873 , H01L23/53223 , H01L23/53238 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
摘要： A porous low k dielectric material containing atoms of at least Si, C, N and H (C and/or O may also be present) is used to provide an interconnect structure having reduced BEOL capacitance and resistance. The porous low k dielectric material is used as an interconnect dielectric material in which at least one interconnect metal-containing structure is embedded therein. The porous low k dielectric material has metal diffusion barrier properties due to the presence of nitrogen as an elemental constituent of the porous low k dielectric material. As such, the porous low k dielectric material can eliminate the need of a diffusion barrier liner, or reduce the thickness of the diffusion barrier liner that is typically formed between an interconnect dielectric material and the embedded interconnect metal structure.
摘要翻译： 使用含有至少Si，C，N和H（C和/或O的原子）的多孔低k介电材料（C和/或O也可以存在），以提供具有降低的BEOL电容和电阻的互连结构。 多孔低k电介质材料用作其中嵌入至少一个互连金属的结构的互连电介质材料。 多孔低k介电材料由于存在作为多孔低k电介质材料的元素成分的氮，具有金属扩散阻挡性能。 因此，多孔低k电介质材料可以消除对扩散阻挡衬垫的需要，或减小通常在互连电介质材料和嵌入式互连金属结构之间形成的扩散阻挡衬里的厚度。
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公开(公告)号：US10418277B2
公开(公告)日：2019-09-17
申请号：US15977437
申请日：2018-05-11
发明人： Kangguo Cheng , Thomas J. Haigh , Juntao Li , Eric G. Liniger , Sanjay C. Mehta , Son V. Nguyen , Chanro Park , Tenko Yamashita
IPC分类号： H01L29/66 , H01L29/78 , H01L21/768 , H01L21/02 , H01L23/528 , H01L23/532 , H01L29/417 , H01L29/49
摘要： Semiconductor devices having air gap spacers that are formed as part of BEOL or MOL layers of the semiconductor devices are provided, as well as methods for fabricating such air gap spacers. For example, a method comprises forming a first metallic structure and a second metallic structure on a substrate, wherein the first and second metallic structures are disposed adjacent to each other with insulating material disposed between the first and second metallic structures. The insulating material is etched to form a space between the first and second metallic structures. A layer of dielectric material is deposited over the first and second metallic structures using a pinch-off deposition process to form an air gap in the space between the first and second metallic structures, wherein a portion of the air gap extends above an upper surface of at least one of the first metallic structure and the second metallic structure.
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公开(公告)号：US20190267279A1
公开(公告)日：2019-08-29
申请号：US16410178
申请日：2019-05-13
发明人： Kangguo Cheng , Thomas J. Haigh , Juntao Li , Eric G. Liniger , Sanjay C. Mehta , Son V. Nguyen , Chanro Park , Tenko Yamashita
IPC分类号： H01L21/768 , H01L21/02 , H01L23/528 , H01L29/78 , H01L29/66 , H01L29/417 , H01L23/532 , H01L29/49
摘要： Semiconductor devices having air gap spacers that are formed as part of BEOL or MOL layers of the semiconductor devices are provided, as well as methods for fabricating such air gap spacers. For example, a method comprises forming a first metallic structure and a second metallic structure on a substrate, wherein the first and second metallic structures are disposed adjacent to each other with insulating material disposed between the first and second metallic structures. The insulating material is etched to form a space between the first and second metallic structures. A layer of dielectric material is deposited over the first and second metallic structures using a pinch-off deposition process to form an air gap in the space between the first and second metallic structures, wherein a portion of the air gap extends above an upper surface of at least one of the first metallic structure and the second metallic structure.
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公开(公告)号：US20180047617A1
公开(公告)日：2018-02-15
申请号：US15789416
申请日：2017-10-20
发明人： Kangguo Cheng , Thomas J. Haigh , Juntao Li , Eric G. Liniger , Sanjay C. Mehta , Son V. Nguyen , Chanro Park , Tenko Yamashita
IPC分类号： H01L21/768 , H01L29/66 , H01L23/532 , H01L29/417 , H01L21/02 , H01L23/528 , H01L29/78 , H01L29/49
CPC分类号： H01L21/7682 , H01L21/02126 , H01L21/02167 , H01L21/0217 , H01L21/02274 , H01L21/76852 , H01L23/528 , H01L23/5329 , H01L29/41775 , H01L29/4991 , H01L29/6653 , H01L29/66795 , H01L29/785
摘要： Semiconductor devices having air gap spacers that are formed as part of BEOL or MOL layers of the semiconductor devices are provided, as well as methods for fabricating such air gap spacers. For example, a method comprises forming a first metallic structure and a second metallic structure on a substrate, wherein the first and second metallic structures are disposed adjacent to each other with insulating material disposed between the first and second metallic structures. The insulating material is etched to form a space between the first and second metallic structures. A layer of dielectric material is deposited over the first and second metallic structures using a pinch-off deposition process to form an air gap in the space between the first and second metallic structures, wherein a portion of the air gap extends above an upper surface of at least one of the first metallic structure and the second metallic structure.
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公开(公告)号：US20180261494A1
公开(公告)日：2018-09-13
申请号：US15977437
申请日：2018-05-11
发明人： Kangguo Cheng , Thomas J. Haigh , Juntao Li , Eric G. Liniger , Sanjay C. Mehta , Son V. Nguyen , Chanro Park , Tenko Yamashita
IPC分类号： H01L21/768 , H01L29/49 , H01L29/66 , H01L29/78 , H01L29/417 , H01L21/02 , H01L23/528 , H01L23/532
CPC分类号： H01L21/7682 , H01L21/02126 , H01L21/02167 , H01L21/0217 , H01L21/02274 , H01L21/76852 , H01L23/528 , H01L23/5329 , H01L29/41775 , H01L29/4991 , H01L29/6653 , H01L29/66795 , H01L29/785
摘要： Semiconductor devices having air gap spacers that are formed as part of BEOL or MOL layers of the semiconductor devices are provided, as well as methods for fabricating such air gap spacers. For example, a method comprises forming a first metallic structure and a second metallic structure on a substrate, wherein the first and second metallic structures are disposed adjacent to each other with insulating material disposed between the first and second metallic structures. The insulating material is etched to form a space between the first and second metallic structures. A layer of dielectric material is deposited over the first and second metallic structures using a pinch-off deposition process to form an air gap in the space between the first and second metallic structures, wherein a portion of the air gap extends above an upper surface of at least one of the first metallic structure and the second metallic structure.
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公开(公告)号：US09892961B1
公开(公告)日：2018-02-13
申请号：US15232341
申请日：2016-08-09
发明人： Kangguo Cheng , Thomas J. Haigh , Juntao Li , Eric G. Liniger , Sanjay C. Mehta , Son V. Nguyen , Chanro Park , Tenko Yamashita
IPC分类号： H01L29/78 , H01L29/40 , H01L21/768 , H01L23/532 , H01L23/528 , H01L21/02 , H01L29/49 , H01L29/66 , H01L29/417
CPC分类号： H01L21/7682 , H01L21/02126 , H01L21/02167 , H01L21/0217 , H01L21/02274 , H01L21/76852 , H01L23/528 , H01L23/5329 , H01L29/41775 , H01L29/4991 , H01L29/6653 , H01L29/66795 , H01L29/785
摘要： Semiconductor devices having air gap spacers that are formed as part of BEOL or MOL layers of the semiconductor devices are provided, as well as methods for fabricating such air gap spacers. For example, a method comprises forming a first metallic structure and a second metallic structure on a substrate, wherein the first and second metallic structures are disposed adjacent to each other with insulating material disposed between the first and second metallic structures. The insulating material is etched to form a space between the first and second metallic structures. A layer of dielectric material is deposited over the first and second metallic structures using a pinch-off deposition process to form an air gap in the space between the first and second metallic structures, wherein a portion of the air gap extends above an upper surface of at least one of the first metallic structure and the second metallic structure.
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