Invention Grant
- Patent Title: Integration of a replica circuit and a transformer above a dielectric substrate
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Application No.: US15410223Application Date: 2017-01-19
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Publication No.: US10116285B2Publication Date: 2018-10-30
- Inventor: Je-Hsiung Lan , Chi Shun Lo , Jonghae Kim , Mario Francisco Velez , John H. Hong
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated-Toler
- Main IPC: H03H11/28
- IPC: H03H11/28 ; H01L27/12 ; H01L23/522 ; H01L23/66 ; H01L49/02 ; H01F41/02 ; H01L27/13 ; H01L23/64 ; H01F19/08 ; H01F27/28

Abstract:
A method includes forming a replica circuit above a surface of a glass-type material. The replica circuit includes a thin-film transistor (TFT) configured to function as a variable capacitor or a variable resistor. The method further includes forming a transformer above the surface of the glass-type material. The transformer is coupled to the replica circuit, and the transformer is configured to facilitate an impedance match between the replica circuit and an antenna.
Public/Granted literature
- US20170134007A1 INTEGRATION OF A REPLICA CIRCUIT AND A TRANSFORMER ABOVE A DIELECTRIC SUBSTRATE Public/Granted day:2017-05-11
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