It is the object of the invention to provide a power semiconductor rectifier with a low on-state-voltage and high blocking capability. The object is attained by a power semiconductor rectifier comprising: a drift layer having a first conductivity type; and an electrode layer forming a Schottky contact with the drift layer, wherein the drift layer includes a base layer having a peak net doping concentration, below 1·1016 cm−3 and a barrier modulation layer which is in direct contact with the electrode layer to form at least a part of the Schottky contact, wherein a net doping concentration of the barrier modulation layer is in a range between 1·1016cm−3 and 1·1019 cm−3 and wherein the barrier modulation layer has a layer thickness in a direction vertical to the interface between the electrode layer and the barrier modulation, layer of at least 1 nm and less than 0.2 μm.