Invention Grant
- Patent Title: Graded in-situ charge trapping layers to enable electrostatic chucking and excellent particle performance for boron-doped carbon films
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Application No.: US15166328Application Date: 2016-05-27
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Publication No.: US10128088B2Publication Date: 2018-11-13
- Inventor: Prashant Kumar Kulshreshtha , Ziqing Duan , Abdul Aziz Khaja , Zheng John Ye , Amit Kumar Bansal
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan LLP
- Main IPC: H01L21/683
- IPC: H01L21/683 ; H01J37/32 ; C23C16/458 ; C23C16/02 ; C23C16/34 ; C23C16/36 ; C23C16/44 ; C23C16/509

Abstract:
The present disclosure generally relates to processing chamber seasoning layers having a graded composition. In one example, the seasoning layer is a boron-carbon-nitride (BCN) film. The BCN film may have a greater composition of boron at the base of the film. As the BCN film is deposited, the boron concentration may approach zero, while the relative carbon and nitrogen concentration increases. The BCN film may be deposited by initially co-flowing a boron precursor, a carbon precursor, and a nitrogen precursor. After a first period of time, the flow rate of the boron precursor may be reduced. As the flow rate of boron precursor is reduced, RF power may be applied to generate a plasma during deposition of the seasoning layer.
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