公开(公告)号：US11898249B2

公开(公告)日：2024-02-13

申请号：US18108989

申请日：2023-02-13

Applicant: Applied Materials, Inc.

Inventor： Nagarajan Rajagopalan ,  Xinhai Han ,  Michael Wenyoung Tsiang ,  Masaki Ogata ,  Zhijun Jiang ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Jianhua Zhou ,  Ramprakash Sankarakrishnan ,  Amit Kumar Bansal ,  Jeongmin Lee ,  Todd Egan ,  Edward W. Budiarto ,  Dmitriy Panasyuk ,  Terrance Y. Lee ,  Jian J. Chen ,  Mohamad A. Ayoub ,  Heung Lak Park ,  Patrick Reilly ,  Shahid Shaikh ,  Bok Hoen Kim ,  Sergey Starik ,  Ganesh Balasubramanian

IPC: C23C16/52 ,  G01B11/06 ,  H01L21/687 ,  H01L21/67 ,  C23C16/509 ,  G01N21/55 ,  G01N21/65 ,  H01L21/00 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/455

CPC classification number: C23C16/52 ,  C23C16/458 ,  C23C16/4557 ,  C23C16/45565 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  G01B11/0625 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/658 ,  H01L21/00 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/687 ,  G01N2201/1222

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

公开(公告)号：US11530482B2

公开(公告)日：2022-12-20

申请号：US16894355

申请日：2020-06-05

Applicant: Applied Materials, Inc.

Inventor： Shailendra Srivastava ,  Sai Susmita Addepalli ,  Nikhil Sudhindrarao Jorapur ,  Daemian Raj Benjamin Raj ,  Amit Kumar Bansal ,  Juan Carlos Rocha-Alvarez ,  Gregory Eugene Chichkanoff ,  Xinhai Han ,  Masaki Ogata ,  Kristopher Enslow ,  Wenjiao Wang

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/50 ,  C23C16/458

Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.

公开(公告)号：US11434569B2

公开(公告)日：2022-09-06

申请号：US16400054

申请日：2019-05-01

Applicant: Applied Materials, Inc.

Inventor： Tuan Anh Nguyen ,  Jason M. Schaller ,  Edward P. Hammond, IV ,  David Blahnik ,  Tejas Ulavi ,  Amit Kumar Bansal ,  Sanjeev Baluja ,  Jun Ma ,  Juan Carlos Rocha

IPC: C23C16/505 ,  C23C16/44 ,  C23C16/458

Abstract: Embodiments described herein relate to ground path systems providing a shorter and symmetrical path for radio frequency (RF) energy to propagate to a ground to reduce generation of the parasitic plasma. The ground path system bifurcates the processing volume of the chamber to form an inner volume that isolates an outer volume of the processing volume.

公开(公告)号：US10889894B2

公开(公告)日：2021-01-12

申请号：US16510845

申请日：2019-07-12

Applicant: Applied Materials, Inc.

Inventor： Daniel Hwung ,  Yuxing Zhang ,  Kalyanjit Ghosh ,  Kaushik Alayavalli ,  Amit Kumar Bansal

IPC: C23C16/40 ,  C23C16/455 ,  H01L21/67

Abstract: A faceplate for a processing chamber is disclosed. The faceplate has a body with a plurality of apertures formed therethrough. A flexure is formed in the body partially circumscribing the plurality of apertures. A cutout is formed through the body on a common radius with the flexure. One or more bores extend from a radially inner surface of the cutout to an outer surface of the body. A heater is disposed between flexure and the plurality of apertures. The flexure and the cutout are thermal chokes which limit heat transfer thereacross from the heater.

公开(公告)号：US10544508B2

公开(公告)日：2020-01-28

申请号：US14035138

申请日：2013-09-24

Applicant: Applied Materials, Inc.

Inventor： Juan Carlos Rocha-Alvarez ,  Amit Kumar Bansal ,  Ganesh Balasubramanian ,  Jianhua Zhou ,  Ramprakash Sankarakrishnan

IPC: C23C16/50 ,  H01L21/67 ,  H01J37/32

Abstract: An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor such as a face plate coupled to a power source, and a heater coupled to the conductive gas distributor. A zoned blocker plate is coupled to the conductive gas distributor and a cooled gas cap is coupled to the zoned blocker plate. A tuning electrode may be disposed between the conductive gas distributor and the chamber body for adjusting a ground pathway of the plasma. A second tuning electrode may be coupled to the substrate support, and a bias electrode may also be coupled to the substrate support.

公开(公告)号：US10233543B2

公开(公告)日：2019-03-19

申请号：US14965061

申请日：2015-12-10

Applicant: Applied Materials, Inc.

Inventor： Amit Kumar Bansal ,  Juan Carlos Rocha-Alvarez ,  Sanjeev Baluja ,  Sam H. Kim ,  Tuan Anh Nguyen

IPC: C23C16/455

Abstract: The present disclosure relates to a semiconductor processing apparatus. The processing chamber includes a chamber body and lid defining an interior volume, a substrate support disposed in the interior volume and a showerhead assembly disposed between the lid and the substrate support. The showerhead assembly includes a faceplate configured to deliver a process gas to a processing region defined between the showerhead assembly and the substrate support and a underplate positioned above the faceplate, defining a first plenum between the lid and the underplate, the having multiple zones, wherein each zone has a plurality of openings that are configured to pass an amount of inert gas from the first plenum into a second plenum defined between the faceplate and the underplate, in fluid communication with the plurality of openings of each zone such that the inert gas mixes with the process gas before exiting the showerhead assembly.

公开(公告)号：US12110590B2

公开(公告)日：2024-10-08

申请号：US18381534

申请日：2023-10-18

Applicant: Applied Materials, Inc.

Inventor： Shailendra Srivastava ,  Sai Susmita Addepalli ,  Nikhil Sudhindrarao Jorapur ,  Daemian Raj Benjamin Raj ,  Amit Kumar Bansal ,  Juan Carlos Rocha-Alvarez ,  Gregory Eugene Chichkanoff ,  Xinhai Han ,  Masaki Ogata ,  Kristopher Enslow ,  Wenjiao Wang

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/50 ,  H01J37/32

CPC classification number: C23C16/45565 ,  C23C16/45536 ,  C23C16/4583 ,  C23C16/50 ,  H01J37/3244 ,  H01J37/32458 ,  H01J2237/3321

Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.

公开(公告)号：US12087555B2

公开(公告)日：2024-09-10

申请号：US18083301

申请日：2022-12-16

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit Ghosh ,  Shailendra Srivastava ,  Tejas Ulavi ,  Yusheng Zhou ,  Amit Kumar Bansal ,  Sanjeev Baluja

IPC: H01J37/32 ,  B08B7/00 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  G03F7/42

CPC classification number: H01J37/32495 ,  H01J37/32862 ,  H01L21/67017 ,  B08B7/0021 ,  G03F7/427 ,  H01J37/32834 ,  H01L21/67028 ,  H01L21/6831 ,  H01L21/68742

Abstract: Implementations disclosed herein generally relate to systems and methods of protecting a substrate support in a process chamber from cleaning fluid during a cleaning process. The method of cleaning the process chamber includes positioning in the process chamber a cover substrate above a substrate support and a process kit that separates a purge volume from a process volume. The method of cleaning includes flowing a purge gas in the purge volume to protect the substrate support and flowing a cleaning fluid to a process volume above the cover substrate, flowing the cleaning fluid in the process volume to an outer flow path, and to an exhaust outlet in the chamber body. The purge volume is maintained at a positive pressure with respect to the process volume to block the cleaning fluid from the purge volume.

公开(公告)号：US11827980B2

公开(公告)日：2023-11-28

申请号：US17974408

申请日：2022-10-26

Applicant: Applied Materials, Inc.

Inventor： Nitin Pathak ,  Amit Kumar Bansal ,  Tuan Anh Nguyen ,  Thomas Rubio ,  Badri N. Ramamurthi ,  Juan Carlos Rocha-Alvarez

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/44

CPC classification number: C23C16/4585 ,  C23C16/4412 ,  C23C16/45565 ,  H01J2329/94 ,  H01J2329/941

Abstract: Aspects of the present disclosure relate generally to isolator devices, components thereof, and methods associated therewith for substrate processing chambers. In one implementation, a substrate processing chamber includes an isolator ring disposed between a pedestal and a pumping liner. The isolator ring includes a first surface that faces the pedestal, the first surface being disposed at a gap from an outer circumferential surface of the pedestal. The isolator ring also includes a second surface that faces the pumping liner and a protrusion that protrudes from the first surface of the isolator ring and towards the outer circumferential surface of the pedestal. The protrusion defines a necked portion of the gap between the pedestal and the isolator ring.

公开(公告)号：US11532462B2

公开(公告)日：2022-12-20

申请号：US16855126

申请日：2020-04-22

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit Ghosh ,  Shailendra Srivastava ,  Tejas Ulavi ,  Yusheng Zhou ,  Amit Kumar Bansal ,  Sanjeev Baluja

IPC: H01J37/32 ,  H01L21/67 ,  B08B7/00 ,  H01L21/683 ,  H01L21/687 ,  G03F7/42

Abstract: Implementations disclosed herein generally relate to systems and methods of protecting a substrate support in a process chamber from cleaning fluid during a cleaning process. The method of cleaning the process chamber includes positioning in the process chamber a cover substrate above a substrate support and a process kit that separates a purge volume from a process volume. The method of cleaning includes flowing a purge gas in the purge volume to protect the substrate support and flowing a cleaning fluid to a process volume above the cover substrate, flowing the cleaning fluid in the process volume to an outer flow path, and to an exhaust outlet in the chamber body. The purge volume is maintained at a positive pressure with respect to the process volume to block the cleaning fluid from the purge volume.