Invention Grant
- Patent Title: P-tunneling field effect transistor device with pocket
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Application No.: US15118843Application Date: 2014-03-27
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Publication No.: US10128356B2Publication Date: 2018-11-13
- Inventor: Uygar E. Avci , Roza Kotlyar , Ian A. Young
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- International Application: PCT/US2014/032059 WO 20140327
- International Announcement: WO2015/147838 WO 20151001
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/66 ; H01L21/18 ; H01L29/78 ; H01L29/88 ; H01L29/739 ; G06F3/041 ; H01L23/66 ; H01L29/786 ; H01L29/423 ; H01L29/165 ; H01L29/205
Abstract:
Tunneling field effect transistors (TFETs) are described herein. In an example, a TFET includes a pocket disposed near a junction of a source region, wherein the pocket region is formed from a material having lower percentage of one type of atom than percentage of the one type of atom in source, channel, and drain regions.
Public/Granted literature
- US20170054006A1 P-TUNNELING FIELD EFFECT TRANSISTOR DEVICE WITH POCKET Public/Granted day:2017-02-23
Information query
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