Invention Grant
- Patent Title: Multilayer structure including diffusion barrier layer and device including the multilayer structure
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Application No.: US15172908Application Date: 2016-06-03
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Publication No.: US10134628B2Publication Date: 2018-11-20
- Inventor: Hyunjae Song , Seunggeol Nam , Seongjun Park , Keunwook Shin , Hyeonjin Shin , Jaeho Lee , Changseok Lee , Yeonchoo Cho
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2015-0108864 20150731
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L21/768 ; H01L23/485 ; H01L21/285 ; H01L29/45

Abstract:
A multilayer structure includes a first material layer, a second material layer, and a diffusion barrier layer. The second material layer is connected to the first material layer. The second material layer is spaced apart from the first material layer. The diffusion barrier layer is between the first material layer and the second material layer. The diffusion barrier layer may include a two-dimensional (2D) material. The 2D material may be a non-graphene-based material, such as a metal chalcogenide-based material having a 2D crystal structure. The first material layer may be a semiconductor or an insulator, and the second material layer may be a conductor. At least a part of the multilayer structure may constitute an interconnection for an electronic device.
Public/Granted literature
- US20170033003A1 MULTILAYER STRUCTURE INCLUDING DIFFUSION BARRIER LAYER AND DEVICE INCLUDING THE MULTILAYER STRUCTURE Public/Granted day:2017-02-02
Information query
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