- 专利标题: Semiconductor device
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申请号: US15714801申请日: 2017-09-25
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公开(公告)号: US10134663B2公开(公告)日: 2018-11-20
- 发明人: Shinji Baba , Toshihiro Iwasaki , Masaki Watanabe
- 申请人: RENESAS ELECTRONICS CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2010-005403 20100114
- 主分类号: H01L23/498
- IPC分类号: H01L23/498 ; H01L25/10 ; H01L23/50
摘要:
This invention provides a multi-pin semiconductor device as a low-cost flip-chip BGA. In the flip-chip BGA, a plurality of signal bonding electrodes in a peripheral area of the upper surface of a multilayer wiring substrate are separated into inner and outer ones and a plurality of signal through holes coupled to a plurality of signal wirings drawn inside are located between a plurality of rows of signal bonding electrodes and a central region where a plurality of bonding electrodes for core power supply are located so that the chip pad pitch can be decreased and the cost of the BGA can be reduced without an increase in the number of layers in the multilayer wiring substrate.
公开/授权文献
- US20180012831A1 SEMICONDUCTOR DEVICE 公开/授权日:2018-01-11
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