Invention Grant
- Patent Title: Heterojunction bipolar transistor
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Application No.: US15588859Application Date: 2017-05-08
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Publication No.: US10134842B2Publication Date: 2018-11-20
- Inventor: Isao Obu , Shigeru Yoshida
- Applicant: MURATA MANUFACTURING CO., LTD.
- Applicant Address: JP Kyoto-fu
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto-fu
- Agency: Studebaker & Brackett PC
- Priority: JP2015-028974 20150217
- Main IPC: H01L29/737
- IPC: H01L29/737 ; H01L29/10 ; H01L29/66 ; H01L27/102 ; H01L29/732 ; H01L27/082 ; H01L29/205 ; H01L29/73 ; H03F1/56 ; H03F3/21 ; H01L29/417 ; H01L29/06 ; H01L29/08
Abstract:
A high-performance HBT that is unlikely to decrease the process controllability and to increase the manufacturing cost is implemented. A heterojunction bipolar transistor includes an emitter layer, a base layer, and a collector layer on a GaAs substrate. The emitter layer is formed of InGaP. The base layer is formed of GaAsPBi having a composition that substantially lattice-matches GaAs.
Public/Granted literature
- US20170243939A1 HETEROJUNCTION BIPOLAR TRANSISTOR Public/Granted day:2017-08-24
Information query
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