Invention Grant
- Patent Title: Semiconductor devices including insulating materials in fins
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Application No.: US15296703Application Date: 2016-10-18
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Publication No.: US10141312B2Publication Date: 2018-11-27
- Inventor: Ho-Jin Jeon , Young-Gun Ko , Gi-Gwan Park , Je-Min Yoo
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2015-0177286 20151211
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/06 ; H01L27/02 ; H01L29/78 ; H01L29/08 ; H01L29/165 ; H01L27/088 ; H01L21/8234 ; H01L21/8238

Abstract:
Semiconductor devices are provided. A semiconductor device includes a first insulating material in a first fin. The semiconductor device includes a second insulating material in a second fin. The first and second insulating materials have different respective sizes. For example, in some embodiments, the first and second insulating materials have different respective widths and/or depths in the first and second fins, respectively.
Public/Granted literature
- US20170110456A1 SEMICONDUCTOR DEVICES INCLUDING INSULATING MATERIALS IN FINS Public/Granted day:2017-04-20
Information query
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