- 专利标题： Oxide thin film transistor, array substrate and display device
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申请号： US15037610申请日： 2015-09-15
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公开(公告)号： US10141449B2公开(公告)日： 2018-11-27
- 发明人: Meili Wang , Hongda Sun , Fengjuan Liu , Lungpao Hsin
- 申请人： BOE TECHNOLOGY GROUP CO., LTD.
- 申请人地址： CN Beijing
- 专利权人： BOE TECHNOLOGY GROUP CO., LTD.
- 当前专利权人： BOE TECHNOLOGY GROUP CO., LTD.
- 当前专利权人地址： CN Beijing
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： CN201510229537 20150507
- 国际申请： PCT/CN2015/089633 WO 20150915
- 国际公布： WO2016/176946 WO 20161110
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/10 ; H01L29/225 ; H01L29/227 ; H01L29/24 ; H01L27/12
摘要：
The embodiments of the present invention provides an oxide TFT, an array substrate and a display device, an oxide channel layer of the oxide TFT comprises a front channel oxide layer and a back channel oxide layer, a conduction band bottom of the back channel oxide layer being higher than a conduction band bottom of the front channel oxide layer, and a band gap of the back channel oxide layer being larger than a band gap of the front channel oxide layer. In the oxide TFT, the array substrate and the display device provided in the present invention, it is possible to accumulate a large number of electrons through the potential difference formed between oxide channel layers of a multilayer structure so as to increase the carrier concentration in the oxide channel layers to achieve the purpose of improving TFT mobility without damaging TFT stability.
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