公开(公告)号：US11967618B2

公开(公告)日：2024-04-23

申请号：US17832984

申请日：2022-06-06

Applicant: FLOSFIA INC.

Inventor： Isao Takahashi ,  Takashi Shinohe ,  Rie Tokuda ,  Masaya Oda ,  Toshimi Hitora

IPC: H01L29/22 ,  C23C16/40 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02 ,  H01L29/04 ,  H01L29/12 ,  H01L29/227 ,  H01L29/24 ,  H01L29/739 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872

CPC classification number: H01L29/227 ,  C23C16/40 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02433 ,  H01L29/045 ,  H01L29/12 ,  H01L29/24 ,  H01L29/739 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872

Abstract: A crystalline oxide semiconductor film with an enhanced electrical property is provided. By use of a mist CVD apparatus, a crystalline oxide semiconductor film with a corundum structure and a principal plane that is an a-plane or an m-plane was obtained on a crystalline substrate by atomizing a raw-material solution containing a dopant that is an n-type dopant to obtain atomized droplets, carrying the atomized droplets by carrier gas onto the crystalline substrate that is an a-plane corundum-structured crystalline substrate or an m-plane corundum-structured crystalline substrate placed in a film-formation chamber, and the atomized droplets were thermally reacted to form the crystalline oxide semiconductor film on the crystalline substrate.

公开(公告)号：US10164157B2

公开(公告)日：2018-12-25

申请号：US15616830

申请日：2017-06-07

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Markus Richter

IPC: H01L29/227 ,  H01L33/50 ,  H01L33/48 ,  H01L21/48 ,  H01L21/56 ,  H01L33/44 ,  H01L51/00

Abstract: A method for producing at least one conversion lamina for a radiation-emitting semiconductor component is specified. In an embodiment, the conversion lamina includes a base material and a conversion substance embedded in the base material, wherein the conversion lamina has a thickness between 60 μm inclusive and 170 μm inclusive.

公开(公告)号：US10014210B2

公开(公告)日：2018-07-03

申请号：US15415609

申请日：2017-01-25

Applicant: ZING SEMICONDUCTOR CORPORATION

Inventor： Deyuan Xiao

IPC: H01L27/12 ,  H01L21/762 ,  H01L21/265 ,  H01L21/324 ,  H01L21/84 ,  H01L29/06 ,  H01L29/167 ,  H01L29/207 ,  H01L29/227

CPC classification number: H01L21/76254 ,  H01L21/26533 ,  H01L21/324 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/167 ,  H01L29/207 ,  H01L29/227

Abstract: The present invention application provides a method for manufacturing a SOI substrate, and the method comprising: providing a first semiconductor substrate; growing a first insulating layer on a top surface of the first semiconductor substrate for forming a first wafer; implanting a deuterium and hydrogen co-doping layer at a certain pre-determined depth of the first wafer; providing a second substrate; growing a second insulating layer on a top surface of the second semiconductor substrate for forming a second wafer; bonding the first wafer with the second wafer; annealing the first wafer and second wafer; separating a part of the first wafer from the second wafer; and forming a deuterium and hydrogen co-doping semiconductor layer on the second wafer.

公开(公告)号：US09977151B2

公开(公告)日：2018-05-22

申请号：US14755191

申请日：2015-06-30

Applicant: Scienbizip Consulting (ShenZhen) Co., Ltd.

Inventor： Feng-Yuen Dai ,  Chau-Jin Hu ,  Yung-Lun Huang ,  Li-Ying Wang He

IPC: H01L29/227 ,  G02B3/00 ,  G02B5/02 ,  H01L33/56 ,  H01L33/50 ,  H01L33/54 ,  G02F1/1335 ,  H01L33/58

CPC classification number: G02B3/00 ,  G02B5/0236 ,  G02B5/0242 ,  G02F1/133603 ,  G02F1/133606 ,  G02F2001/133614 ,  G02F2202/36 ,  H01L33/501 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L2933/0091

Abstract: A light diffusion member includes a matrix and a number of quantum dots uniformly dispersed in the matrix. The matrix is made of epoxy resin and ammonium persulfate. The quantum dots have a mass percentage of about 10% to about 20% of the total mass of the light diffusion member. A light emitting device using the light diffusion member and a display device using the light emitting device are also provided.

公开(公告)号：US09881919B2

公开(公告)日：2018-01-30

申请号：US15059516

申请日：2016-03-03

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Effendi Leobandung ,  Tenko Yamashita

IPC: H01L29/167 ,  H01L29/207 ,  H01L29/227 ,  H01L31/0288 ,  H01L27/092 ,  H01L29/66 ,  H01L29/06 ,  H01L21/8238

CPC classification number: H01L21/2257 ,  H01L21/2255 ,  H01L21/2256 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823892 ,  H01L27/0921 ,  H01L27/0924 ,  H01L29/0638 ,  H01L29/1083 ,  H01L29/16 ,  H01L29/66537 ,  H01L29/66803

Abstract: A method for doping fins includes depositing a first dopant layer at a base of fins formed in a substrate, depositing a dielectric layer on the first dopant layer and etching the dielectric layer and the first dopant layer in a first region to expose the substrate and the fins. A second dopant layer is conformally deposited over the fins and the substrate in the first region. The second dopant layer is recessed to a height on the fins in the first region. An anneal is performed to drive dopants into the fins from the first dopant layer in a second region and from the second dopant layer in the first region to concurrently form punch through stoppers in the fins and wells in the substrate.

公开(公告)号：US09786816B2

公开(公告)日：2017-10-10

申请号：US14879798

申请日：2015-10-09

Applicant: LG INNOTEK CO., LTD.

Inventor： Sang Youl Lee ,  Jae Won Seo

IPC: H01L29/227 ,  H01L33/38 ,  H01L33/40 ,  H01L33/46 ,  H01L33/54 ,  H01L33/62 ,  H01L33/42 ,  H01L33/48

CPC classification number: H01L33/382 ,  H01L33/38 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/486 ,  H01L33/54 ,  H01L33/62

Abstract: Embodiments provide a light emitting device including a substrate, a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, disposed under the substrate, a reflective layer disposed under the second conductive semiconductor layer, the reflective layer having at least one first through-hole formed in a first direction, the first direction being a thickness direction of the light emitting structure, a contact layer embedded in at least one second through-hole penetrating the reflective layer, the second conductive semiconductor layer, and the active layer so as to be connected to the first conductive semiconductor layer, and an insulation layer disposed between the contact layer and each of the reflective layer, the second conductive semiconductor layer, and the active layer, the insulation layer being embedded in the first through-hole.

公开(公告)号：US20170256440A1

公开(公告)日：2017-09-07

申请号：US15258899

申请日：2016-09-07

Applicant: ZING SEMICONDUCTOR CORPORATION

Inventor： DEYUAN XIAO

IPC: H01L21/762 ,  H01L21/265 ,  H01L29/06 ,  H01L29/227 ,  H01L21/324 ,  H01L29/167 ,  H01L29/207 ,  H01L21/84 ,  H01L27/12

CPC classification number: H01L21/76254 ,  H01L21/26533 ,  H01L21/324 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/167 ,  H01L29/207 ,  H01L29/227

Abstract: The present invention application provides a method for manufacturing a SOI substrate, and the method comprising: providing a first semiconductor substrate; growing a first insulating layer on a top surface of the first semiconductor substrate for forming a first wafer; implanting a deuterium and hydrogen co-doping layer at a certain pre-determined depth of the first wafer; providing a second substrate; growing a second insulating layer on a top surface of the second semiconductor substrate for forming a second wafer; bonding the first wafer with the second wafer; annealing the first wafer and second wafer; separating a part of the first wafer from the second wafer; and forming a deuterium and hydrogen co-doping semiconductor layer on the second wafer.

公开(公告)号：US09633843B2

公开(公告)日：2017-04-25

申请号：US15192503

申请日：2016-06-24

Applicant: Global Wafers Co., Ltd.

Inventor： Yao-Chung Chang ,  Chia-Wen Ko ,  Manhsuan Lin

IPC: H01L29/227 ,  H01L21/04 ,  H01L21/425 ,  H01L21/265 ,  H01L21/02 ,  H01L21/324 ,  H01L21/304 ,  H01L29/20 ,  H01L21/223 ,  H01L21/225

CPC classification number: H01L21/02658 ,  H01L21/02002 ,  H01L21/02178 ,  H01L21/02233 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/223 ,  H01L21/2255 ,  H01L21/304 ,  H01L21/3046 ,  H01L21/324 ,  H01L29/2003

Abstract: A heterostructure may include a substrate having a first primary surface, a second primary surface, and a diffusion layer extending a depth into the substrate from the first primary surface; and a deposition layer disposed on the second primary surface of the substrate. The heterostructure may further include an epitaxial layer disposed on the deposition layer.

公开(公告)号：US09595589B2

公开(公告)日：2017-03-14

申请号：US14980553

申请日：2015-12-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hung Cheng ,  Cheng-Ta Wu ,  Yeur-Luen Tu ,  Chia-Shiung Tsai ,  Ru-Liang Lee ,  Tung-I Lin ,  Wei-Li Chen

IPC: H01L29/167 ,  H01L29/207 ,  H01L29/227 ,  H01L31/0288 ,  H01L29/423 ,  H01L29/66 ,  H01L21/02 ,  H01L29/10 ,  H01L27/146 ,  H01L29/06 ,  H01L29/16 ,  H01L29/165

CPC classification number: H01L29/42364 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L27/14614 ,  H01L27/14638 ,  H01L29/0649 ,  H01L29/0688 ,  H01L29/1037 ,  H01L29/105 ,  H01L29/1054 ,  H01L29/16 ,  H01L29/165 ,  H01L29/4236 ,  H01L29/66636 ,  H01L29/66651 ,  H01L29/66666 ,  H01L29/66795 ,  H01L29/785

Abstract: The present disclosure relates to a transistor device. In some embodiments, the transistor device has an epitaxial layer disposed over a substrate. The epitaxial layer is arranged between a source region and a drain region separated along a first direction. Isolation structures are arranged on opposite sides of the epitaxial layer along a second direction, perpendicular to the first direction. A gate dielectric layer is disposed over the epitaxial layer, and a conductive gate electrode is disposed over the gate dielectric layer. The epitaxial layer overlying the substrate improves the surface roughness of the substrate, thereby improving transistor device performance.

Abstract translation: 本公开涉及晶体管器件。 在一些实施例中，晶体管器件具有设置在衬底上的外延层。 外延层布置在沿着第一方向分离的源极区域和漏极区域之间。 绝缘结构沿垂直于第一方向的第二方向布置在外延层的相对侧上。 栅极电介质层设置在外延层上，并且导电栅电极设置在栅极介电层上。 覆盖衬底的外延层改善了衬底的表面粗糙度，从而提高了晶体管器件的性能。

公开(公告)号：US09224920B2

公开(公告)日：2015-12-29

申请号：US14085073

申请日：2013-11-20

Applicant: LG DISPLAY CO., LTD.

Inventor： Kyung-Seok Jeong ,  Gee-Sung Chae ,  Jin-Wuk Kim ,  Sung-hee Cho

IPC: H01L29/06 ,  H01L33/28 ,  H01L29/12 ,  H01L29/227 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  H01L29/22 ,  H01L51/50

CPC classification number: H01L29/225 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  H01L21/02557 ,  H01L21/02601 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/125 ,  H01L29/127 ,  H01L29/22 ,  H01L29/227 ,  H01L33/285 ,  H01L51/502

Abstract: A quantum rod includes a core of ZnS semiconductor particle having a rod shape; and a transition metal with which the core is doped and which is biased at one side of a length direction of the core.

Abstract translation: 量子棒包括具有棒状的ZnS半导体颗粒的核心; 以及掺杂有芯的过渡金属，并且其被偏置在芯的长度方向的一侧。